| Reference : Efficient Gate-tunable light-emitting device made of defective boron nitride nanotube... |
| Scientific journals : Article | |||
| Physical, chemical, mathematical & earth Sciences : Physics | |||
| http://hdl.handle.net/10993/8267 | |||
| Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible | |
| English | |
| Attaccalite, Claudio [Centre National de la Recherche Scientifique - CNRS > Institut NEEL] | |
Wirtz, Ludger  [Institute for Electronics, Microelectronics, and Nanotechnology (IEMN), CNRS UMR 8520, Dept. ISEN ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >] | |
| Marini, Andrea [Consiglio Nazionale delle Ricerche, Italy > Istituto di Struttura della Materia (ISM)] | |
| Rubio, Angel [Nano-Bio Spectroscopy Group and ETSF Scientific Development Centre, Departamento de Fisica de Materiales, Centro de Fısica de Materiales CSIC-UPV/ EHU-MPC and DIPC, Universidad del Paıs Vasco UPV/EHU, Spain ; Fritz Haber Institut der Max Planck Gesellschaft, Germany] | |
| 24-Sep-2013 | |
| Scientific Reports | |
| Nature Publishing Group | |
| 3 | |
| 2698 | |
| Yes (verified by ORBilu) | |
| International | |
| 2045-2322 | |
| London | |
| United Kingdom | |
| [en] Boron nitride is a promising material for nanotechnology applications due to its two-dimensional
graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate graphene as well as for its intrinsic UV lasing response. Similar to carbon, one-dimensional boron nitride nanotubes (BNNTs) have been theoretically predicted and later synthesised. Here we use first principles simulations to unambiguously demonstrate that i) BN nanotubes inherit the highly efficient UV luminescence of hexagonal BN; ii) the application of an external perpendicular field closes the electronic gap keeping the UV lasing with lower yield; iii) defects in BNNTS are responsible for tunable light emission from the UV to the visible controlled by a transverse electric field (TEF). Our present findings pave the road towards optoelectronic applications of BN-nanotube-based devices that are simple to implement because they do not require any special doping or complex growth. | |
| http://hdl.handle.net/10993/8267 | |
| 10.1038/srep02698 |
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