Doped Graphene as Tunable Electron-Phonon Coupling Material
English
Attaccalite, Claudio[Institut NEEL, CNRS-UJF, Grenoble, France / Nano-Bio Spectroscopy group and ETSF Scientific Development Centre, Dpto. Fisica de Materiales, Universidad del Pais Vasco, San Sebastian, Spain]
Wirtz, Ludger[Centre National de la Recherche Scientifique - CNRS > UMR 8520, Dept. ISEN > Istitute for Electronics, Microelectronics and Nanotechnology]
Rubio, Angel[Nano-Bio Spectroscopy group and ETSF Scientific Development Centre, Universidad del Pais Vasco, San Sebastian, Spain / Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany]
[en] we present a new way to tune the electron phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.