[en] we present a new way to tune the electron phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.
Disciplines :
Physique
Auteur, co-auteur :
Attaccalite, Claudio; Institut NEEL, CNRS-UJF, Grenoble, France / Nano-Bio Spectroscopy group and ETSF Scientific Development Centre, Dpto. Fisica de Materiales, Universidad del Pais Vasco, San Sebastian, Spain
WIRTZ, Ludger ; Centre National de la Recherche Scientifique - CNRS > UMR 8520, Dept. ISEN > Istitute for Electronics, Microelectronics and Nanotechnology
Lazzeri, Michele; Universités Paris 6 et 7 > IMPMC
Mauri, Francesco; Universités Paris 6 et 7 > IMPMC
Rubio, Angel; Nano-Bio Spectroscopy group and ETSF Scientific Development Centre, Universidad del Pais Vasco, San Sebastian, Spain / Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany
Langue du document :
Anglais
Titre :
Doped Graphene as Tunable Electron-Phonon Coupling Material
Date de publication/diffusion :
2010
Titre du périodique :
Nano Letters
ISSN :
1530-6984
eISSN :
1530-6992
Maison d'édition :
American Chemical Society, Washington, Etats-Unis - District de Columbia
