Abstract :
[en] Wide-gap Cu(In, Ga)S2 solar cells with In2O3: Sn (ITO) as transparent back contact (TBC) are evaluated for the application of top cells in tandem cells. Efficiency of 11 % was achieved using wide bandgap (1.58 e V) absorber grown with NaF co-evaporation at high temperature. High temperature growth facilitated high quality absorber with quasi-Fermi level splitting above 1.0V. Despite the necessity of high temperature for good quality absorber, it offers extraction barrier with transparent back contact which limits the current density of solar cells. However, NaF co-evaporation increased the fill factor and improved the JV curve of the solar cell.
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