alkali postdeposition treatments; Cu(In,Ga)Se2; doping; potential fluctuations; single crystals; tail states; Alkali postdeposition treatment; Cu(in,ga)se2; Grain-boundaries; Non-radiative; Open circuit voltage loss; Open-circuit voltages; Postdeposition treatments; Potential fluctuations; Tail state; Voltage loss; Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics; Energy Engineering and Power Technology; Electrical and Electronic Engineering; Cu(In; Ga)Se-2
Abstract :
[en] The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage (VOC) in Cu(In,Ga)Se2 solar cells. A strategy that has proven effective in reducing tail states is the addition of alkali metals, the effect of which has been associated with the passivation of charged defects at grain boundaries. Herein, tail states in Cu(In,Ga)Se2 are revisited by studying the effect of compositional variations and alkali incorporation into single-crystal films. The results demonstrate that sodium and potassium decrease the density of tail states despite the absence of grain boundaries, suggesting that there is more to alkalis than just grain boundary effects. Moreover, an increase in doping as a result of sodium or potassium incorporation is shown to contribute to the reduced tail states, which are demonstrated to arise largely from electrostatic potential fluctuations and to be determined by grain interior properties. By analyzing the voltage loss in high-efficiency polycrystalline and single crystalline devices, this work presents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2 based on the combined effect of doping on tail states and VOC.
Disciplines :
Physics
Author, co-author :
Ramírez, Omar ; Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
Nishinaga, Jiro; Research Institute for Energy Conservation, National Institute of Advanced Industrial Science and Technology (AIST), Koriyama, Japan
Dingwell, Felix; Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
WANG, Taowen ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
PROT, Aubin Jean-Claude Mireille ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
WOLTER, Max ; University of Luxembourg > Faculty of Science, Technology and Medicine > Department of Physics and Materials Science
Ranjan, Vibha; Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
SIEBENTRITT, Susanne ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
External co-authors :
yes
Language :
English
Title :
On the Origin of Tail States and Open Circuit Voltage Losses in Cu(In,Ga)Se2
Fonds National de la Recherche Luxembourg Horizon 2020 Framework Programme
Funding text :
This research was funded in whole, or in part, by the Luxembourg National Research Fund (FNR), grant reference C17/MS/11696002 GRISC and PRIDE17/12246511/PACE. A.P. thanks AVANCIS GmbH in the framework of the project POLCA. M.H.W. thanks the European Union's Horizon 2020 Research and Innovation Program under Grant Agreement No. 641004 (Sharc25). For the purpose of open access, the author has applied a Creative Commons Attribution 4.0 International (CC BY 4.0) license to any Author Accepted Manuscript version arising from this submission.This research was funded in whole, or in part, by the Luxembourg National Research Fund (FNR), grant reference C17/MS/11696002 GRISC and PRIDE17/12246511/PACE. A.P. thanks AVANCIS GmbH in the framework of the project POLCA. M.H.W. thanks the European Union's Horizon 2020 Research and Innovation Program under Grant Agreement No. 641004 (Sharc25). For the purpose of open access, the author has applied a Creative Commons Attribution 4.0 International (CC BY 4.0) license to any Author Accepted Manuscript version arising from this submission.
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