[en] We report a Raman study of the so-called buffer layer with $(6 3 6 3)R30^ $ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.
Disciplines :
Physique
Auteur, co-auteur :
Fromm, F.
Jr, M. H. Oliveira
MOLINA-SANCHEZ, Alejandro ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Hundhausen, M.
Lopes, J. M. J.
Riechert, H.
WIRTZ, Ludger ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Seyller, T.
Langue du document :
Anglais
Titre :
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
