Article (Scientific journals)
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Fromm, F.; Jr, M. H. Oliveira; Molina-Sanchez, Alejandro et al.
2013In New Journal of Physics, 15 (4), p. 043031
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Abstract :
[en] We report a Raman study of the so-called buffer layer with $(6 3 6 3)R30^ $ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.
Disciplines :
Physics
Author, co-author :
Fromm, F.
Jr, M. H. Oliveira
Molina-Sanchez, Alejandro ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Hundhausen, M.
Lopes, J. M. J.
Riechert, H.
Wirtz, Ludger ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Seyller, T.
Language :
English
Title :
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Publication date :
2013
Journal title :
New Journal of Physics
ISSN :
1367-2630
Publisher :
Institute of Physics, Bristol, United Kingdom
Volume :
15
Issue :
4
Pages :
043031
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBilu :
since 06 September 2013

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