Reference : Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/5641
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
English
Fromm, F. [> >]
Jr, M. H. Oliveira [> >]
Molina-Sanchez, Alejandro mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Hundhausen, M. [> >]
Lopes, J. M. J. [> >]
Riechert, H. [> >]
Wirtz, Ludger mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Seyller, T. [> >]
2013
New Journal of Physics
Institute of Physics
15
4
043031
Yes (verified by ORBilu)
International
1367-2630
Bristol
United Kingdom
[en] We report a Raman study of the so-called buffer layer with $(6 3 6 3)R30^ $ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.
http://hdl.handle.net/10993/5641
http://stacks.iop.org/1367-2630/15/i=4/a=043031

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Open access
1367-2630_15_4_043031.pdfPublisher postprint1.96 MBView/Open

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.