[en] Graphene is an ideal platform to study the coherence of quantum interference pathways by tuning doping or laser excitation energy. The latter produces a Raman excitation profile that provides direct insight into the lifetimes of intermediate electronic excitations and, therefore, on quantum interference, which has so far remained elusive. Here, we control the Raman scattering pathways by tuning the laser excitation energy in graphene doped up to 1.05 eV. The Raman excitation profile of the G mode indicates its position and full width at half-maximum are linearly dependent on doping. Doping-enhanced electron–electron interactions dominate the lifetimes of Raman scattering pathways and reduce Raman interference. This will provide guidance for engineering quantum pathways for doped graphene, nanotubes, and topological insulators.
Disciplines :
Physique
Auteur, co-auteur :
Chen, Xue
REICHARDT, Sven ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Lin, Miao-Ling
Leng, Yu-Chen
Lu, Yan
Wu, Heng
Mei, Rui
WIRTZ, Ludger ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Zhang, Xin
Ferrari, Andrea C.
Tan, Ping-Heng
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
Control of Raman Scattering Quantum Interference Pathways in Graphene
Date de publication/diffusion :
2023
Titre du périodique :
ACS Nano
ISSN :
1936-0851
eISSN :
1936-086X
Maison d'édition :
American Chemical Society
Peer reviewed :
Peer reviewed vérifié par ORBi
Focus Area :
Physics and Materials Science
Projet FnR :
FNR14802965 - Resonant Raman Scattering Dynamics From First Principles, 2020 (01/05/2021-30/04/2024) - Sven Reichardt
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