Post-deposition annealing and interfacial atomic layer deposition buffer layers of Sb2Se3/CdS stacks for reduced interface recombination and increased open-circuit voltages
WEISS, Thomas ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Minguez-Bacho, Minguez-Bacho; Chemistry of Thin Film Materials, IZNF, Friedrich-Alexander University of Erlangen- Nurnberg, Erlangen, Germany
ZUCCALA, Elena ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
MELCHIORRE, Michele ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Valle, Nathalie; Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Belvaux, Luxembourg
El Adib, Brahime; Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Belvaux, Luxembourg
Yokosawa, Tadahiro; Institute of Micro- and Nanostructure Research (IMN) & Center for Nanoanalysis and Electron Microscopy (CENEM), IZNF, Friedrich-Alexander University Erlangen- Nürnberg,
Spiecker; Institute of Micro- and Nanostructure Research (IMN) & Center for Nanoanalysis and Electron Microscopy (CENEM), IZNF, Friedrich-Alexander University Erlangen- Nürnberg,
Bachmann, Julien; 4Chemistry of Thin Film Materials, IZNF, Friedrich-Alexander University of Erlangen- Nurnberg
DALE, Phillip ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
SIEBENTRITT, Susanne ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
Post-deposition annealing and interfacial atomic layer deposition buffer layers of Sb2Se3/CdS stacks for reduced interface recombination and increased open-circuit voltages
Date de publication/diffusion :
2022
Titre du périodique :
Progress in Photovoltaics
ISSN :
1062-7995
eISSN :
1099-159X
Maison d'édition :
John Wiley & Sons, Hoboken, Etats-Unis - New Jersey
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