Reference : The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/53509
The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2
English
Rommelfangen, Jonathan mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)]
Reichardt, Sven mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)]
Ben Chu, Van [> >]
Wirtz, Ludger mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)]
Dale, Phillip mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)]
Redinger, Alex mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)]
2022
AIP Adv.
American Institute of Physics
12
6
065010
Yes
International
2158-3226
[en] 2D materials ; Synthesis/growth ; Raman spectroscopy
[en] The development of high-quality chemical vapor-deposited mono- and few-layer MoS2 is of high relevance for future applications in functional devices. Consequently, a detailed understanding of the growth mode and the parameters affecting it is important. Here, we show for the case of mono- and few-layer MoS2 grown on Muscovite mica, how strain and temperature impact the growth mode. We show how misleading the determination of the number of MoS2 layers is, solely based on Raman spectroscopy due to the occurrence of strain and changes in the growth mode. A combination of atomic force microscopy, Raman spectroscopy, and ab initio calculations reveal that that the growth at 500 dgree C synthesis temperature exhibits a strained layer-by-layer growth of up to three mono-layers, whereas at 700 degree C, a strain release occurs and layer-by-layer growth is confined to the first mono-layer only. We relate the occurrence of strain to the formation of gas bubbles below the MoS2 film, escaping the mica sheets during high temperature synthesis. Our analysis shows that mica substrates can be used to study strain in 2D materials without the need to apply external stress and that a detailed knowledge of the MoS2 morphology is necessary to correctly interpret the Raman results.
Researchers ; Professionals ; Students
http://hdl.handle.net/10993/53509
10.1063/5.0087207
FnR ; FNR13584473 > Jonathan Rommelfangen > 2D_defects > Functionalization Of Mos2 Via Ion Beams And Alkali Metals > 15/09/2019 > 14/09/2023 > 2019, FNR11244141 > Alex Redinger > SUNSPOT > Surface And Interface Science On Photovoltaic Materials > 15/03/2017 > 14/09/2022 > 2016, FNR12686759 > Phillip Dale > STAR-Sol > Semi-transparent Solar Cells For Building-integrated Photovoltaics > 01/06/2019 > 31/05/2022 > 2018, FNR14802965 > Sven Reichardt > RESRAMAN > Resonant Raman Scattering Dynamics From First Principles > 01/05/2021 > 30/04/2024 > 2020, FNR13376969 > Ludger Wirtz > ACCEPT > Anharmonic And Exchange Interactions In Phonon Spectra > 01/01/2020 > 30/06/2024 > 2018

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