[en] The development of high-quality chemical vapor-deposited mono- and few-layer MoS2 is of high relevance for future applications in functional devices. Consequently, a detailed understanding of the growth mode and the parameters affecting it is important. Here, we show for the case of mono- and few-layer MoS2 grown on Muscovite mica, how strain and temperature impact the growth mode. We show how misleading the determination of the number of MoS2 layers is, solely based on Raman spectroscopy due to the occurrence of strain and changes in the growth mode. A combination of atomic force microscopy, Raman spectroscopy, and ab initio calculations reveal that that the growth at 500 dgree C synthesis temperature exhibits a strained layer-by-layer growth of up to three mono-layers, whereas at 700 degree C, a strain release occurs and layer-by-layer growth is confined to the first mono-layer only. We relate the occurrence of strain to the formation of gas bubbles below the MoS2 film, escaping the mica sheets during high temperature synthesis. Our analysis shows that mica substrates can be used to study strain in 2D materials without the need to apply external stress and that a detailed knowledge of the MoS2 morphology is necessary to correctly interpret the Raman results.
Disciplines :
Physics
Author, co-author :
Rommelfangen, Jonathan ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Reichardt, Sven ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Ben Chu, Van
Wirtz, Ludger ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Dale, Phillip ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
Redinger, Alex ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
External co-authors :
no
Language :
English
Title :
The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2
Publication date :
2022
Journal title :
AIP Adv.
ISSN :
2158-3226
Publisher :
American Institute of Physics
Volume :
12
Issue :
6
Pages :
065010
Peer reviewed :
Peer reviewed
Focus Area :
Physics and Materials Science
FnR Project :
FNR13584473 > Jonathan Rommelfangen > 2D_defects > Functionalization Of Mos2 Via Ion Beams And Alkali Metals > 15/09/2019 > 14/09/2023 > 2019, FNR11244141 > Alex Redinger > SUNSPOT > Surface And Interface Science On Photovoltaic Materials > 15/03/2017 > 14/09/2022 > 2016, FNR12686759 > Phillip Dale > STAR-Sol > Semi-transparent Solar Cells For Building-integrated Photovoltaics > 01/06/2019 > 31/05/2022 > 2018, FNR14802965 > Sven Reichardt > RESRAMAN > Resonant Raman Scattering Dynamics From First Principles > 01/05/2021 > 30/04/2024 > 2020, FNR13376969 > Ludger Wirtz > ACCEPT > Anharmonic And Exchange Interactions In Phonon Spectra > 01/01/2020 > 30/06/2024 > 2018
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films," Science 306, 666-669 (2004). 10.1126/science.1102896
W. Choi, N. Choudhary, G. H. Han, J. Park, D. Akinwande, and Y. H. Lee, "Recent development of two-dimensional transition metal dichalcogenides and their applications," Mater. Today 20, 116-130 (2017). 10.1016/j.mattod.2016.10.002
A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, "Emerging photoluminescence in monolayer MoS2," Nano Lett. 10, 1271-1275 (2010). 10.1021/nl903868w
C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, "Anomalous lattice vibrations of single-and few-layer MoS2," ACS Nano 4, 2695-2700 (2010). 10.1021/nn1003937
S. Wachter, D. K. Polyushkin, O. Bethge, and T. Mueller, "A microprocessor based on a two-dimensional semiconductor," Nat. Commun. 8, 14948 (2016). 10.1038/ncomms14948
H.-M. Li, D. Lee, D. Qu, X. Liu, J. Ryu, A. Seabaugh, and W. J. Yoo, "Ultimate thin vertical p-n junction composed of 2D layered molybdenum disulfide," Nat. Commun. 6, 6564 (2015). 10.1038/ncomms7564
P. K. Sahoo, S. Memaran, Y. Xin, L. Balicas, and H. R. Gutiérrez, "One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy," Nature 553, 63-67 (2018). 10.1038/nature25155
M.-l. Tsai, S.-H. Su, J.-K. Chang, D.-S. Tsai, C.-H. Chen, C.-I. Wu, L.-J. Li, L.-J. Chen, and J.-H. He, "Monolayer MoS2heterojunction solar cells," ACS Nano 8, 8317-8322 (2014). 10.1021/nn502776h
M. Bernardi, M. Palummo, and J. C. Grossman, "Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials," Nano Lett. 13, 3664-3670 (2013). 10.1021/nl401544y
H. Wang, C. Li, P. Fang, Z. Zhang, and J. Z. Zhang, "Synthesis, properties, and optoelectronic applications of two-dimensional MoS2and MoS2-based heterostructures," Chem. Soc. Rev. 47, 6101-6127 (2018). 10.1039/c8cs00314a
N. Briggs, S. Subramanian, Z. Lin, X. Li, X. Zhang, K. Zhang, K. Xiao, D. Geohegan, R. Wallace, L.-Q. Chen, M. Terrones, A. Ebrahimi, S. Das, J. Redwing, C. Hinkle, K. Momeni, A. van Duin, V. Crespi, S. Kar, and J. A. Robinson, "A roadmap for electronic grade 2D materials," 2D Mater. 6, 022001 (2019). 10.1088/2053-1583/aaf836
Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, M. Kan, J. Feng, Q. Sun, and Z. Liu, "Epitaxial monolayer MoS2on mica with novel photoluminescence," Nano Lett. 13, 3870-3877 (2013). 10.1021/nl401938t
W. H. Chae, J. D. Cain, E. D. Hanson, A. A. Murthy, and V. P. Dravid, "Substrate-induced strain and charge doping in CVD-grown monolayer MoS2," Appl. Phys. Lett. 111, 143106 (2017). 10.1063/1.4998284
H. Lin, A. Rauf, N. Severin, I. M. Sokolov, and J. P. Rabe, "Influence of interface hydration on sliding of graphene and molybdenum-disulfide single-layers," J. Colloid Interface Sci. 540, 142-147 (2019). 10.1016/j.jcis.2018.12.089
H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, "Bandgap engineering of strained monolayer and bilayer MoS2," Nano Lett. 13, 3626 (2013). 10.1021/nl4014748
M. A. Gonzalez, D. Pareek, L. Büsing, M. Beer, J. Parisi, S. Schäfer, and L. Gütay, "Rapid formation of large-area MoS2monolayers by a parameter resilient atomic layer deposition approach," APL Mater. 9, 051122 (2021). 10.1063/5.0041042
A. Albagami, S. Ambardar, H. Hrim, P. K. Sahoo, Y. Emirov, H. R. Gutiérrez, and D. V. Voronine, "Tip-enhanced photoluminescence of freestanding lateral heterobubbles," ACS Appl. Mater. Interfaces 14, 11006-11015 (2022). 10.1021/acsami.1c24486
M. Buscema, G. A. Steele, H. S. J. van der Zant, and A. Castellanos-Gomez, "The effect of the substrate on the Raman and photoluminescence emission of single layer MoS2," Nano Res. 7, 561 (2013). 10.1007/s12274-014-0424-0
H. Li, A. W. Contryman, X. Qian, S. M. Ardakani, Y. Gong, X. Wang, J. M. Weisse, C. H. Lee, J. Zhao, P. M. Ajayan, J. Li, H. C. Manoharan, and X. Zheng, "Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide," Nat. Commun. 6, 7381 (2015). 10.1038/ncomms8381
G. Kukucska and J. Koltai, "Theoretical investigation of strain and doping on the Raman spectra of monolayer MoS2," Phys. Status Solidi B 254, 1700184 (2017). 10.1002/pssb.201700184
P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, A. Dal Corso, S. de Gironcoli, S. Fabris, G. Fratesi, R. Gebauer, U. Gerstmann, C. Gougoussis, A. Kokalj, M. Lazzeri, L. Martin-Samos, N. Marzari, F. Mauri, R. Mazzarello, S. Paolini, A. Pasquarello, L. Paulatto, C. Sbraccia, S. Scandolo, G. Sclauzero, A. P. Seitsonen, A. Smogunov, P. Umari, and R. M. Wentzcovitch, "QUANTUM ESPRESSO: A modular and open-source software project for quantum simulations of materials," J. Phys.: Condens. Matter 21, 395502 (2009). 10.1088/0953-8984/21/39/395502
P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, Jr, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, "Advanced capabilities for materials modelling with Quantum ESPRESSO," J. Phys.: Condens. Matter 29, 465901 (2017). 10.1088/1361-648x/aa8f79
D. R. Hamann, "Optimized norm-conserving Vanderbilt pseudopotentials," Phys. Rev. B 88, 085117 (2013). 10.1103/physrevb.88.085117
J. P. Perdew and Y. Wang, "Accurate and simple analytic representation of the electron-gas correlation energy," Phys. Rev. B 45, 13244 (1992). 10.1103/physrevb.45.13244
X. Luo, Y. Zhao, J. Zhang, Q. Xiong, and S. Y. Quek, "Anomalous frequency trends in MoS2thin films attributed to surface effects," Phys. Rev. B 88, 075320 (2013). 10.1103/physrevb.88.075320
A. Molina-Sánchez, K. Hummer, and L. Wirtz, "Vibrational and optical properties of MoS2: From monolayer to bulk," Surf. Sci. Rep. 70, 554-586 (2015). 10.1016/j.surfrep.2015.10.001
C. Rice, R. Young, R. Zan, U. Bangert, D. Wolverson, T. Georgiou, R. Jalil, and K. Novoselov, "Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2," Phys. Rev. B 87, 081307 (2013). 10.1103/physrevb.87.081307
L. Cartz and B. Tooper, "Dehydration of phlogopite micas studied by high-temperature transmission electron microscopy," J. Appl. Phys. 36, 2783-2787 (1965). 10.1063/1.1714580
O. Ochedowski, B. K. Bussmann, and M. Schleberger, "Graphene on mica-intercalated water trapped for life," Sci. Rep. 4, 6003 (2014). 10.1038/srep06003
I. V. Markov, Crystal Growth for Beginners, 2nd ed. (World Scientific, 2003).
C. Roland and G. H. Gilmer, "Epitaxy on surfaces vicinal to Si(001). I. Diffusion of silicon adatoms over the terraces," Phys. Rev. B 46, 13428-13436 (1992). 10.1103/physrevb.46.13428
H. Brune, K. Bromann, H. Röder, K. Kern, J. Jacobsen, P. Stoltze, K. Jacobsen, and J. Norskov, "Effect of strain on surface diffusion and nucleation," Phys. Rev. B 52, R14380-R14383 (1995). 10.1103/physrevb.52.r14380
