Esposito, Massimiliano ; University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)
External co-authors :
no
Language :
English
Title :
Reliability and entropy production in nonequilibrium electronic memories
Publication date :
2022
Journal title :
Physical Review. E, Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics
K. Natori and N. Sano, J. Appl. Phys. 83, 5019 (1998) 0021-8979 10.1063/1.367317.
A. Wang, B. H. Calhoun, and A. P. Chandrakasan, Sub-threshold Design for Ultra Low-Power Systems (Springer, Boston, Massachusetts, US, 2006), Vol. 95.
S. Krishnan, S. V. Garimella, G. M. Chrysler, and R. V. Mahajan, IEEE Trans. Adv. packaging 30, 462 (2007) 1521-3323 10.1109/TADVP.2007.898517.
E. Rezaei, M. Donato, W. R. Patterson, A. Zaslavsky, and R. I. Bahar, IEEE Trans. Device Mater. Relib. 20, 488 (2020) 1530-4388 10.1109/TDMR.2020.2996627.
J. Han and M. Orshansky, in 2013 18th IEEE European Test Symposium (ETS) (IEEE, 2013), pp. 1-6.
J. Gu and P. Gaspard, Phys. Rev. E 99, 012137 (2019) 2470-0045 10.1103/PhysRevE.99.012137.
J. Gu and P. Gaspard, J. Stat. Mech. (2020) 103206 1742-5468 10.1088/1742-5468/abbcd5.
P. Hanggi and P. Jung, IBM J. Res. Dev. 32, 119 (1988) 0018-8646 10.1147/rd.321.0119.
N. Freitas, J.-C. Delvenne, and M. Esposito, Phys. Rev. X 11, 031064 (2021) 10.1103/PhysRevX.11.031064.
H. Li, J. Mundy, W. Patterson, D. Kazazis, A. Zaslavsky, and R. I. Bahar, in Proceedings of Workshop on System Effects of Logic Soft Errors (Citeseer, 2006).
R. Sarpeshkar, T. Delbruck, and C. A. Mead, IEEE Circuits Devices Mag. 9, 23 (1993) 8755-3996 10.1109/101.261888.
V. Elgart and A. Kamenev, Phys. Rev. E 70, 041106 (2004) 1539-3755 10.1103/PhysRevE.70.041106.
A. Kamenev and B. Meerson, Phys. Rev. E 77, 061107 (2008) 1539-3755 10.1103/PhysRevE.77.061107.
H. Touchette, Phys. Rep. 478, 1 (2009) 0370-1573 10.1016/j.physrep.2009.05.002.
M. Assaf and B. Meerson, J. Phys. A: Math. Theor. 50, 263001 (2017) 1751-8113 10.1088/1751-8121/aa669a.
D. T. Limmer, C. Y. Gao, and A. R. Poggioli, Eur. Phys. J. B 94, 145 (2021) 10.1140/epjb/s10051-021-00164-1.
P. Hänggi, P. Talkner, and M. Borkovec, Rev. Mod. Phys. 62, 251 (1990) 0034-6861 10.1103/RevModPhys.62.251.
S. Redner, A Guide to First-Passage Processes (Cambridge University Press, Cambridge, United Kingdom, 2001).
N. G. Van Kampen, Stochastic Processes in Physics and Chemistry (Elsevier, Amsterdam, The Netherlands, 1992), Vol. 1.
T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987) 10.1103/PhysRevLett.59.109.
H. Pothier, P. Lafarge, C. Urbina, D. Esteve, and M. H. Devoret, Europhys. Lett. 17, 249 (1992) 0295-5075 10.1209/0295-5075/17/3/011.
M. H. Devoret, D. Estève, H. Grabert, G.-L. Ingold, H. Pothier, and C. Urbina, Phys. Rev. Lett. 64, 1824 (1990) 0031-9007 10.1103/PhysRevLett.64.1824.
P. Zheng, Ph.D. thesis, UC Berkeley, 2016.
S. Mukhopadhyay, H. Mahmoodi-Meimand, and K. Roy, in 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No. 04CH37525) (IEEE, 2004), pp. 64-67.
T. Cossetto, Problems in Nonequilibrium Fluctuations across Scales: A Path Integral Approach (2020), https://orbilu.uni.lu/handle/10993/45484, accessed Feb, 19, 2021.
A. Kamenev, Field Theory of Non-Equilibrium Systems (Cambridge University Press, Cambridge, England, UK, 2011).
M. F. Weber and E. Frey, Rep. Prog. Phys. 80, 046601 (2017) 0034-4885 10.1088/1361-6633/aa5ae2.
F. Bouchet and J. Reygner, Ann. Henri Poincaré 17, 3499 (2016) 10.1007/s00023-016-0507-4.
S. Arrhenius, Z. Phys. Chem. 4U, 96 (1889) 2196-7156 10.1515/zpch-1889-0408.
H. Eyring, J. Chem. Phys. 3, 107 (1935) 0021-9606 10.1063/1.1749604.
H. A. Kramers, Physica 7, 284 (1940) 0031-8914 10.1016/S0031-8914(40)90098-2.
N. Berglund, Markov Processes Relat. Fields 19, 459 (2013).
G. Falasco and M. Esposito, Phys. Rev. E 103, 042114 (2021) 2470-0045 10.1103/PhysRevE.103.042114.
K. V. Palem, IEEE Trans. Comput. 54, 1123 (2005) 0018-9340 10.1109/TC.2005.145.
J. Kaiser, R. Faria, K. Y. Camsari, and S. Datta, Front. Comput. Neurosci. 14, 14 (2020) 1662-5188 10.3389/fncom.2020.00014.
W. A. Borders, A. Z. Pervaiz, S. Fukami, K. Y. Camsari, H. Ohno, and S. Datta, Nature (London) 573, 390 (2019) 0028-0836 10.1038/s41586-019-1557-9.
C. C. Enz and E. A. Vittoz, Charge-Based MOS Transistor Modeling (John Wiely & Sons, Chichester, 2006).
Y. Tsividis and C. McAndrew, Operation and Modeling of the MOS Transistor (Oxford University Press, Oxford, United Kingdom, 2011).