Reference : Critical field anisotropy in the antiferroelectric switching of PbZrO3 films
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/49479
Critical field anisotropy in the antiferroelectric switching of PbZrO3 films
English
Milesi-Brault, Cosme [Luxembourg Institute of Science & Technology - LIST > > > ; University of Luxembourg]
Godard, Nicolas [Luxembourg Institute of Science & Technology - LIST]
Girod, Stephanie [Luxembourg Institute of Science & Technology - LIST]
Fleming, Yves mailto [Luxembourg Institute of Science & Technology - LIST]
El Adib, Brahime [Luxembourg Institute of Science & Technology - LIST]
Valle, Nathalie [Luxembourg Institute of Science & Technology - LIST]
Sebastjan, Glinsek [Luxembourg Institute of Science & Technology - LIST]
Defay, Emmanuel mailto [Luxembourg Institute of Science & Technology - LIST]
Guennou, Mael mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)]
2021
APPLIED PHYSICS LETTERS
AMER INST PHYSICS
118
4
Yes (verified by ORBilu)
International
0003-6951
1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
[en] Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e., the possibility to induce a phase transition to a polar phase by an electric field. Here, we investigate the switching behavior of the model antiferroelectric perovskite PbZrO3 using thin films processed by chemical solution deposition in different geometries and orientations. Both out-of-plane and in-plane switching configurations are investigated. The critical field is observed to be highly dependent on the direction of the electric field with respect to the film texture. We show that this behavior is qualitatively consistent with a phase transition to a rhombohedral polar phase. We finally estimate the importance of crystallite orientation and film texturation in the variations observed in the literature.
http://hdl.handle.net/10993/49479
10.1063/5.0029599 042901
Article
FnR ; FNR11348912 > Mael Guennou > BIAFET > Bismuth-based Antiferroelectrics As Tunable Materials > 01/09/2017 > 31/12/2020 > 2016

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