Reference : The other model antiferroelectric: PbHfO3 thin films from ALD precursors
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
The other model antiferroelectric: PbHfO3 thin films from ALD precursors
Hanrahan, Brendan [Hanrahan, B (Corresponding Author), US Army, Sensors Electron Devices Directorate, Res Lab, Adelphi, MD 20783 USA. Hanrahan, Brendan]
Milesi-Brault, Cosme [Leff, Asher]
Leff, Asher [Payne, Alexis]
Alexis, Payne [Strnad, Nicholas, US Army, Sensors Electron Devices Directorate, Res Lab, Adelphi, MD 20783 USA. Milesi-Brault, Cosme, Luxembourg Inst Sci Technol, Mat Res Technol Dept, 41 Rue Brill, L-4422 Belvaux, Luxembourg. Milesi-Brault, Cosme]
Liu, Shi [Guennou, Mael, Interinst Res Grp Unilu LIST Ferro Mat, 41 Rue Brill, L-4422 Belvaux, Luxembourg. Leff, Asher, Gen Tech Serv LLC, Wall, NJ 07727 USA. Payne, Alexis, North Carolina State Univ, Mat Sci Engn Dept, Raleigh, NC 27606 USA. Liu, Shi, Westlake Univ, Sch Sci, Hangzhou 310024, Zhejiang, Peoples R China. Liu, Shi, Westlake Inst Adv Study, Inst Nat Sci, Hangzhou 310024, Zhejiang, Peoples R China. Guennou, Mael, Univ Luxembourg, Dept Phys Mat Sci, 41 Rue Brill, L-4422 Belvaux, Luxembourg.]
Guennou, Mael mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)]
Strnad, Nicholas [> >]
2166-532X Science Technology - Other Topics; Materials Science; Physics Nanoscience Nanotechnology; Materials Science, Multidisciplinary Physics, Applied LIU, SHI/I-5494-2013 Milesi-Brault, Cosme/P-5249-2017 LIU, SHI/0000-0002-8488-4848 Payne, Alexis/0000-0002-9359-2177 Milesi-Brault, Cosme/0000-0002-3431-3158 Hanrahan, Brendan/0000-0002-6666-4390 Guennou, Mael/0000-0001-9349-3024 Luxembourg National Research FundLuxembourg National Research Fund [BIAFET C16/MS/11348912/Guennou] The authors would like to acknowledge the Army Research Laboratory (ARL) Specialty Electronic Materials and Sensors Cleanroom (SEMASC) Nanofabrication Facility for their assistance with device fabrication. C.M.-B. and M.G. acknowledge financial support by the Luxembourg National Research Fund under Project No. BIAFET C16/MS/11348912/Guennou. 42 4 10 11 APL Mater. QY5AL WOS:000630052100001
1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
[en] Antiferroelectric PbHfO3 is grown from atomic layer deposition precursors lead bis(dimethylaminomethylpropanolate) and tetrakis dimethylamino hafnium with H2O and O-3 oxidizers in thicknesses from 20 nm to 200 nm at a substrate temperature of 250 degrees C. X-ray analysis shows an as-grown crystalline PbO phase that diffuses into an amorphous HfO2 matrix upon annealing to form a randomly oriented, orthorhombic PbHfO3 thin film. Electrical characterization reveals characteristic double hysteresis loops with maximum polarizations of around 30 mu C/cm(2) and transition fields of 350 kV/cm-500 kV/cm depending on the thickness. Temperature-dependent permittivity and polarization testing show a phase transition at 185 degrees C, most probably to the paraelectric phase, but give no clear evidence for the intermediate phase known from bulk PbHfO3. The energy storage density for the films reaches 16 J/cm(3) at 2 MV/cm. A dielectric tunability of 221 is available within 1 V for the thinnest film. These results highlight the unique spectrum of properties available for thin film perovskite antiferroelectrics.
10.1063/5.0035730 021108
FnR ; FNR11348912 > Mael Guennou > BIAFET > Bismuth-based Antiferroelectrics As Tunable Materials > 01/09/2017 > 31/12/2020 > 2016

File(s) associated to this reference

Fulltext file(s):

Open access
2021-APLMat-Hanrahan-TheOtherModel-PbHfO3byALD.pdfPublisher postprint6.98 MBView/Open

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.