Reference : The effect of KF post-deposition treatments on the optoelectronic properties of Cu(In...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/46643
The effect of KF post-deposition treatments on the optoelectronic properties of Cu(In,Ga)Se2 single crystals
English
Ramirez Sanchez, Omar mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
Bertrand, Maud mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Debot, Alice mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
Siopa, Daniel mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
Valle, Nathalie mailto [Luxembourg Institute of Science & Technology - LIST > Materials Research and Technology]
Schmauch, Jörg mailto [Saarland University > Experimental Physics]
Siebentritt, Susanne mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
2021
Solar RRL
Wiley
Yes
International
2367-198X
Weinheim
Germany
[en] CIGSe ; single crystals ; alkali post-deposition treatments
[en] The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an improvement of the open-circuit voltage, which origin has been associated with grain boundaries. The present work discusses the effect of potassium fluoride post-deposition treatments on the optoelectronic properties of a series of sodium-free Cu(In,Ga)Se2 single crystals with varying Cu and Ga content. Results suggest that improvement of the quasi-Fermi level splitting can be achieved despite the absence of grain boundaries, being greater in low-gallium Cu-poor absorbers. Secondary ion mass spectrometry reveals the presence of potassium inside the bulk of the films, suggesting that transport of potassium can occur through grain interiors. In addition, a type inversion from n to p in KF-treated low-gallium Cu(In,Ga)Se2 is observed, which along a carrier lifetime study demonstrates that potassium can act as a dopant. The fact that potassium by its own can alter the optoelectronic properties of Cu(In,Ga)Se2 single crystals demonstrates that the effect of post-deposition treatments goes beyond grain boundary passivation.
Researchers ; Students ; General public
http://hdl.handle.net/10993/46643
FnR ; FNR11696002 > Alex Redinger > GRISC > Grain Boundaries In Solar Cells > 01/07/2018 > 31/12/2021 > 2017

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Open access
KF PDTs on Cu(In,Ga)Se2 single crystals - Accepted.pdfAuthor preprint1.75 MBView/Open

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.