Reference : Domain-wall engineering and topological defects in ferroelectric and ferroelastic mat...
Scientific journals : Other
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/45047
Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials
English
Nataf, G. F. [> >]
Guennou, Mael mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)]
Gregg, J. M. [> >]
Meier, D. [> >]
Hlinka, J. [> >]
Salje, E. K. H. [> >]
Kreisel, Jens mailto [University of Luxembourg > CRC > Vice-rectorate for Research (VR Research)]
2020
Nature Reviews. Physics
Nature Publishing Group
2
11
634-648
Yes
2522-5820
[en] Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses approaching the unit cell level. When this spatial confinement is combined with observations of emergent functional properties, such as polarity in non-polar systems or electrical conductivity in otherwise insulating materials, it becomes clear that domain walls represent new and exciting objects in matter. In this Review, we discuss the exotic polarization profiles that can arise at domain walls with multiple order parameters and the different mechanisms that lead to domain-wall polarity in non-polar ferroelastic materials. The emergence of energetically degenerate variants of the domain walls themselves suggests the existence of interesting quasi-1D topological defects within such walls. We also provide an overview of the general notions that have been postulated as fundamental mechanisms responsible for domain-wall conduction in ferroelectrics. We then discuss the prospect of combining domain walls with transition regions observed at phase boundaries, homo- and heterointerfaces, and other quasi-2D objects, enabling emergent properties beyond those available in today's topological systems. Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses approaching the unit cell level and emergent functional properties. This Review discusses the exotic polarization profiles that arise at domain walls and the fundamental mechanisms responsible for domain-wall conduction.
http://hdl.handle.net/10993/45047
10.1038/s42254-020-0235-z

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