Reference : Influence of stoichiometry and temperature on quasi Fermi level splitting of sulfide ...

	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a journal
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/10993/42319

Title :	Influence of stoichiometry and temperature on quasi Fermi level splitting of sulfide CIS absorber layers
Language :	English
Author, co-author :	Lomuscio, Alberto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
	Melchiorre, Michele [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
	Siebentritt, Susanne [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Publication date :	29-Nov-2018
Journal title :	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher :	Institute of Electrical and Electronics Engineers Inc.
Pages :	1922-1924
Peer reviewed :	Yes
ISSN :	0160-8371
Event name :	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Event date :	10 June 2018 through 15 June 2018
Event place (city) :	Waikoloa Village
Event country :	USA
Keywords :	[en] CIS ; Cu-poor and Cu-rich absrobers ; Energy conversion ; Open circuit voltage ; Photoelectrochemical cells ; Photoluminescence ; Photovoltaic cells ; Solar cells ; Stoichiometry ; Sulfur compounds ; Absorber layers ; Cu-poor ; Deep defects ; Quasi-Fermi level splitting ; Record efficiencies ; Room-temperature photoluminescence ; Fermi level
Abstract :	[en] CuInS-based solar cells suffer from a low open circuit voltage. Absorbers grown under both Cu-excess and Cudeficiency have been used to fabricate record efficiency photovoltaic cells. In this work, we present the influence of stoichiometry on the quality of absorbers by means of calibrated room temperature photoluminescence and quasi Fermi level splitting evaluation (qFLs). Deep defects-related photoluminescence decreases using higher Cu/In ratio, leading to a corresponding improvement in qFLs, with values above 900 meV for high copper rich absorbers. © 2018 IEEE.
Research centres :	University of Luxembourg
Funders :	Fonds National de la Recherche Luxembourg
Permalink :	http://hdl.handle.net/10993/42319
DOI :	10.1109/PVSC.2018.8548252

	File(s) associated to this reference
	Fulltext file(s): File Commentary Version Size Access Limited access proceeding_2018_A_Lomuscio.pdf Publisher postprint 88.18 kB Request a copy

All documents in ORBi^lu are protected by a user license.

 

University of Luxembourg Library |  Feedback |  Legal notices Site Map