Reference : Influence of stoichiometry and temperature on quasi Fermi level splitting of sulfide ...
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/42319
Influence of stoichiometry and temperature on quasi Fermi level splitting of sulfide CIS absorber layers
English
Lomuscio, Alberto mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Melchiorre, Michele mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Siebentritt, Susanne mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
29-Nov-2018
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Institute of Electrical and Electronics Engineers Inc.
1922-1924
Yes
0160-8371
7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
10 June 2018 through 15 June 2018
Waikoloa Village
USA
[en] CIS ; Cu-poor and Cu-rich absrobers ; Energy conversion ; Open circuit voltage ; Photoelectrochemical cells ; Photoluminescence ; Photovoltaic cells ; Solar cells ; Stoichiometry ; Sulfur compounds ; Absorber layers ; Cu-poor ; Deep defects ; Quasi-Fermi level splitting ; Record efficiencies ; Room-temperature photoluminescence ; Fermi level
[en] CuInS-based solar cells suffer from a low open circuit voltage. Absorbers grown under both Cu-excess and Cudeficiency have been used to fabricate record efficiency photovoltaic cells. In this work, we present the influence of stoichiometry on the quality of absorbers by means of calibrated room temperature photoluminescence and quasi Fermi level splitting evaluation (qFLs). Deep defects-related photoluminescence decreases using higher Cu/In ratio, leading to a corresponding improvement in qFLs, with values above 900 meV for high copper rich absorbers. © 2018 IEEE.
University of Luxembourg
Fonds National de la Recherche Luxembourg
http://hdl.handle.net/10993/42319
10.1109/PVSC.2018.8548252

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