Abstract :
[en] Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample.
da Silva, S. Filipe Covre; LaboratórioNacionaldeNanotecnologia(LNNano/CNPEM), ; UniversidadeFederaldeViçosa > Departamento deFísica
Malachias, A.; Universidade Federal de Minas Gerais > Departamento de Física,
Deneke, Ch; Laboratório Nacional de Nanotecnologia (LNNano/CNPEM),
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