Reference : Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
da Silva, S. Filipe Covre [> LaboratórioNacionaldeNanotecnologia(LNNano/CNPEM), > > ; UniversidadeFederaldeViçosa > Departamento deFísica]
Martin Lanzoni, Evandro mailto [> Laboratório Nacional de Nanotecnologia (LNNano/CNPEM)]
Malachias, A. [Universidade Federal de Minas Gerais > Departamento de Física,]
Deneke, Ch [> Laboratório Nacional de Nanotecnologia (LNNano/CNPEM),]
Journal of Crystal Growth
Yes (verified by ORBilu)
[en] A3. Molecular beam epitaxy ; A1. Patterned substrate ; B2. Freestanding membranes ; InAs growth
[en] Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample.
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The 18th International Conference on Molecular Beam Epitaxy (MBE 2014)

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