Reference : Fermi-level pinning in methylammonium lead iodide perovskites

	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	Focus Areas :	Physics and Materials Science
	To cite this reference:	http://hdl.handle.net/10993/41286

Title :	Fermi-level pinning in methylammonium lead iodide perovskites
Language :	English
Author, co-author :	Gallet, Thibaut [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
	Grabowski, David [Forschungszentrum Jülich GmbH > Institut für Energie- und Klimaforschung]
	Kirchartz, Thomas [Forschungszentrum Jülich GmbH > Institut für Energie- und Klimaforschung > > ; University of Duisburg-Essen > Faculty of Engineering and CENIDE]
	Redinger, Alex [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Publication date :	2019
Journal title :	Nanoscale
Peer reviewed :	Yes (verified by ORBilu)
ISSN :	2040-3364
Keywords :	[en] perovskite ; MAPI ; STM ; surface ; fermi energy
Abstract :	[en] Hybrid organic inorganic perovskites are ideal candidates for absorber layers in next generation thin film photovoltaics. The polycrystalline nature of these layers imposes substantial complications for the design of high efficiency devices since the optoelectronic properties can vary on the nanometre scale. Here we show via scanning tunnelling microscopy and spectroscopy that different grains and grain facets exhibit variations in the local density of states. Modeling of the tunneling spectroscopy curves allows us to quantify the density and fluctuations of surface states and estimate the variations in workfunction on the nanometre scale. The simulations corroborate that the high number of surface states leads to Fermi-level pinning of the methylammonium lead iodide surfaces. We do not observe a variation of the local density of states at the grain boundaries compared to the grain interior. These results are in contrast to other reported SPM measurements in literature. Our results show that most of the fluctuations of the electrical properties in these polycrystalline materials arise due to grain to grain variations and not due to distinct electronic properties of the grain boundaries. The measured workfunction changes at the different grains result in local variations of the band alignment with the carrier selective top contact and the varying number of surface states influence the recombination activity in the devices.
Funders :	Fonds National de la Recherche - FnR
Target :	Researchers ; Professionals ; Students ; General public ; Others
Permalink :	http://hdl.handle.net/10993/41286
DOI :	10.1039/C9NR02643F
Other URL :	http://xlink.rsc.org/?DOI=C9NR02643F
FnR project :	FnR ; FNR11244141 > Alex Redinger > SUNSPOT > Surface and interface science on photovoltaic materials > 15/03/2017 > 14/03/2022 > 2016

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