Article (Scientific journals)
Resistivity scaling model for metals with conduction band anisotropy
De Clercq, Miguel; Moors, Kristof; Sankaran, Kiroubanand et al.
2018In Physical Review Materials, 2 (3), p. 033801
Peer reviewed
 

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Abstract :
[en] It is generally understood that the resistivity of metal thin films scales with film thickness mainly due to grain boundary and boundary surface scattering. Recently, several experiments and ab initio simulations have demonstrated the impact of crystal orientation on resistivity scaling. The crystal orientation cannot be captured by the commonly used resistivity scaling models and a qualitative understanding of its impact is currently lacking. In this work, we derive a resistivity scaling model that captures grain boundary and boundary surface scattering as well as the anisotropy of the band structure. The model is applied to Cu and Ru thin films, whose conduction bands are (quasi-) isotropic and anisotropic, respectively. After calibrating the anisotropy with ab initio simulations, the resistivity scaling models are compared to experimental resistivity data and a renormalization of the fitted grain boundary reflection coefficient can be identified for textured Ru.
Disciplines :
Physics
Author, co-author :
De Clercq, Miguel
Moors, Kristof ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Sankaran, Kiroubanand
Pourtois, Geoffrey
Dutta, Shibesh
Adelmann, Christoph
Magnus, Wim
Sorée, Bart
External co-authors :
yes
Language :
English
Title :
Resistivity scaling model for metals with conduction band anisotropy
Publication date :
2018
Journal title :
Physical Review Materials
Publisher :
American Physical Society
Volume :
2
Issue :
3
Pages :
033801
Peer reviewed :
Peer reviewed
Focus Area :
Physics and Materials Science
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since 07 March 2018

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