Reference : The promise of solution-processed Fe2GeS4 thin films in iron chalcogenide photovoltaics

	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	Focus Areas :	Physics and Materials Science
	To cite this reference:	http://hdl.handle.net/10993/34668

Title :	The promise of solution-processed Fe2GeS4 thin films in iron chalcogenide photovoltaics
Language :	English
Author, co-author :	Liu, Mimi [Delaware State University > Department of Chemistry]
	Berg, Dominik M. [Delaware State University > Department of Chemistry > > ; Delaware State University > Department of Physics and Astronomy]
	Hwang, Po-Yu [Delaware State University > Department of Chemistry]
	Lai, Cheng-Yu [Delaware State University > Department of Chemistry]
	Stone, Keving H. [SLAC National Accelerator Laboratory,]
	Babbe, Finn [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Dobson, Kevin D. [University of Delaware > Institute of Energy Conversion,]
	Radu, Daniela R. [Delaware State University > Department of Chemistry, > > ; University of Delaware > Department of Materials Science and Engineering]
Publication date :	6-Feb-2018
Journal title :	Journal of Materials Science
Publisher :	Springer Science & Business Media B.V.
Peer reviewed :	Yes (verified by ORBilu)
Audience :	International
ISSN :	0022-2461
e-ISSN :	1573-4803
City :	Dordrecht
Country :	The Netherlands
Abstract :	[en] The olivine Fe2GeS4, featuring non-toxic elements, cost-effective synthesis, and suitable optoelectronic properties, recently emerged as a promising light-absorbing candidate. Fe2GeS4 precursor powders obtained via a simple solutionbased process were converted to highly crystalline Fe2GeS4 powders upon a thermal treatment in controlled atmosphere. Thin films fabricated by dip coating in the Fe2GeS4 precursor dispersion and subjected to the same thermal treatment render high-purity Fe2GeS4 thin films with a band gap of 1.4 eV, measured by room-temperature photoluminescence. Using Fe2GeS4 thin films as the sole absorber in a solution-based solar cell, open-circuit voltages of 361 mV are observed, while the use of the Fe2GeS4 films as counter electrodes in dyesensitized solar cell constructs enhances the overall power conversion efficiency of the cell by a factor of five. This is the first report of a photovoltaic device based on Fe2GeS4.
Permalink :	http://hdl.handle.net/10993/34668

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