Reference : The promise of solution-processed Fe2GeS4 thin films in iron chalcogenide photovoltaics
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/34668
The promise of solution-processed Fe2GeS4 thin films in iron chalcogenide photovoltaics
English
Liu, Mimi [Delaware State University > Department of Chemistry]
Berg, Dominik M. [Delaware State University > Department of Chemistry > > ; Delaware State University > Department of Physics and Astronomy]
Hwang, Po-Yu [Delaware State University > Department of Chemistry]
Lai, Cheng-Yu [Delaware State University > Department of Chemistry]
Stone, Keving H. [SLAC National Accelerator Laboratory,]
Babbe, Finn mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Dobson, Kevin D. [University of Delaware > Institute of Energy Conversion,]
Radu, Daniela R. [Delaware State University > Department of Chemistry, > > ; University of Delaware > Department of Materials Science and Engineering]
6-Feb-2018
Journal of Materials Science
Springer Science & Business Media B.V.
Yes (verified by ORBilu)
International
0022-2461
1573-4803
Dordrecht
The Netherlands
[en] The olivine Fe2GeS4, featuring non-toxic elements, cost-effective synthesis, and
suitable optoelectronic properties, recently emerged as a promising light-absorbing
candidate. Fe2GeS4 precursor powders obtained via a simple solutionbased
process were converted to highly crystalline Fe2GeS4 powders upon a
thermal treatment in controlled atmosphere. Thin films fabricated by dip coating
in the Fe2GeS4 precursor dispersion and subjected to the same thermal
treatment render high-purity Fe2GeS4 thin films with a band gap of 1.4 eV,
measured by room-temperature photoluminescence. Using Fe2GeS4 thin films as
the sole absorber in a solution-based solar cell, open-circuit voltages of 361 mV
are observed, while the use of the Fe2GeS4 films as counter electrodes in dyesensitized
solar cell constructs enhances the overall power conversion efficiency
of the cell by a factor of five. This is the first report of a photovoltaic device
based on Fe2GeS4.
http://hdl.handle.net/10993/34668

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