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Quantitative PL Imaging of Thin Film Solar Cells - Potential and Pitfalls
Redinger, Alex; Kretzschmar, Steffen; Unold, Thomas Ieee
2016In IEEE PVSEC proceedings
 

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Abstract :
[en] Photoluminescence imaging as well as quantitative photoluminescence spectroscopy has been successfully applied to different solar cell materials, such as crystalline silicon and polycrystalline Cu(In, Ga) Se-2. These methods can be used to investigate spatial inhomogeneities as well as for the contactless determination of quasi-Fermi level splittings, which are related to the open-circuit voltage in finished photovoltaic devices. The theory underlying the analysis of quantitative PL imaging is found to work reliably for more ideal semiconductors such as silicon, but can pose substantial problems for the more non-ideal semiconductors such as kesterite-type materials, where both the optical properties as well as the recombination process may vary widely from sample to sample. In this contribution we will evaluate different approaches to analyse quantitative PL imaging and discuss the potential pitfalls incurred, especially when the actual sample temperature during the measurement is not properly taken into account.
Disciplines :
Physics
Author, co-author :
Redinger, Alex ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Kretzschmar, Steffen
Unold, Thomas Ieee
External co-authors :
yes
Language :
English
Title :
Quantitative PL Imaging of Thin Film Solar Cells - Potential and Pitfalls
Publication date :
2016
Event name :
IEEE PVSEC conference 2016
Event date :
from 05-06-2016 to 10-06-2016
Main work title :
IEEE PVSEC proceedings
ISBN/EAN :
9781509027248
Pages :
3559-3562
Focus Area :
Physics and Materials Science
Commentary :
43rd IEEE Photovoltaic Specialists Conference (PVSC), Portland, OR, JUN 05-10, 2016
Available on ORBilu :
since 22 November 2017

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