Reference : Quantitative PL Imaging of Thin Film Solar Cells - Potential and Pitfalls
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
Quantitative PL Imaging of Thin Film Solar Cells - Potential and Pitfalls
Redinger, Alex mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Kretzschmar, Steffen [> >]
Unold, Thomas Ieee [> >]
IEEE PVSEC proceedings
IEEE PVSEC conference 2016
from 05-06-2016 to 10-06-2016
[en] Photoluminescence imaging as well as quantitative photoluminescence spectroscopy has been successfully applied to different solar cell materials, such as crystalline silicon and polycrystalline Cu(In, Ga) Se-2. These methods can be used to investigate spatial inhomogeneities as well as for the contactless determination of quasi-Fermi level splittings, which are related to the open-circuit voltage in finished photovoltaic devices. The theory underlying the analysis of quantitative PL imaging is found to work reliably for more ideal semiconductors such as silicon, but can pose substantial problems for the more non-ideal semiconductors such as kesterite-type materials, where both the optical properties as well as the recombination process may vary widely from sample to sample. In this contribution we will evaluate different approaches to analyse quantitative PL imaging and discuss the potential pitfalls incurred, especially when the actual sample temperature during the measurement is not properly taken into account.
43rd IEEE Photovoltaic Specialists Conference (PVSC), Portland, OR, JUN 05-10, 2016

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