Reference : Intragrain charge transport in kesterite thin films-Limits arising from carrier local...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
Intragrain charge transport in kesterite thin films-Limits arising from carrier localization
Hempel, Hannes [> >]
Redinger, Alex mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Repins, Ingrid [> >]
Moisan, Camille [> >]
Larramona, Gerardo [> >]
Dennler, Gilles [> >]
Handwerg, Martin [> >]
Fischer, Saskia F. [> >]
Eichberger, Rainer [> >]
Unold, Thomas [> >]
[en] Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)(4) kesterite thin films are found to increase from 32 to 140 cm(2) V-1 s(-1) with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by co-evaporation colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9\%-10.0 efficiency in the completed device. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (

File(s) associated to this reference

Fulltext file(s):

Open access
Intragrain charge transport in kesterite thin films.pdfPublisher postprint805.52 kBView/Open

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.