Reference : Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rap...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/33058
Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion
English
Fave, Alain [Institut National des Sciences Appliquées de Lyon - INSA Lyon > Sciences et génie des Matériaux > Institut des Nanotechnologies de Lyon]
Lelièvre, Jean-François [Procédés, Matériaux et Energie Solaire - PROMES]
Gallet, Thibaut mailto [Institut National des Sciences Appliquées de Lyon - INSA Lyon > Sciences et Génie des Matériaux > Institut des Nanotechnologies de Lyon - INL]
Su, Qiaoyu [Institut des Sciences Appliquées de Lyon - INSA Lyon > Sciences et Génie des Matériaux > Institut des Nanotechnologies de Lyon - INL]
Lemiti, Mustapha [Institut des Sciences Appliquées de Lyon - INSA Lyon > Sciences et Génie des Matériaux > Institut des Nanotechnologies de Lyon - INL]
21-Sep-2017
Energy Procedia
Elsevier
124
7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany
577-583
Yes (verified by ORBilu)
International
1876-6102
Amsterdam
The Netherlands
[en] tandem solar cell ; silicon tunnel junction ; proximity rapid thermal diffusion
[en] Increasing competitiveness of photovoltaic (PV) devices is currently an important objective in technological research, especially with the development of tandem solar cells based on c-Si as the bottom cell. For a monolithical structure, a tunnel diode in between the top and bottom cells is necessary.

In this work we report on the development of the fabrication of Si tunnel junction using a combination of spin-on doping and proximity rapid thermal diffusion. A desirable attribute of this process is simplicity. Two different structures p++/n++ or n++/p++ were fabricated on (100) Si substrates. Carrier density profiles were measured by ECV to characterize the shallow doping profiles. Vertical tunnel diodes were fabricated and I(V) characteristics are presented. It is shown that device peak current densities up to 270 A/cm² are achieved using this technique, which is the best value reported with such simple technique.
http://hdl.handle.net/10993/33058
10.1016/j.egypro.2017.09.281
http://www.sciencedirect.com/science/article/pii/S187661021734225X

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