Article (Scientific journals)
Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion
Fave, Alain; Lelièvre, Jean-François; GALLET, Thibaut et al.
2017In Energy Procedia, 124, p. 577-583
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Keywords :
tandem solar cell; silicon tunnel junction; proximity rapid thermal diffusion
Abstract :
[en] Increasing competitiveness of photovoltaic (PV) devices is currently an important objective in technological research, especially with the development of tandem solar cells based on c-Si as the bottom cell. For a monolithical structure, a tunnel diode in between the top and bottom cells is necessary. In this work we report on the development of the fabrication of Si tunnel junction using a combination of spin-on doping and proximity rapid thermal diffusion. A desirable attribute of this process is simplicity. Two different structures p++/n++ or n++/p++ were fabricated on (100) Si substrates. Carrier density profiles were measured by ECV to characterize the shallow doping profiles. Vertical tunnel diodes were fabricated and I(V) characteristics are presented. It is shown that device peak current densities up to 270 A/cm² are achieved using this technique, which is the best value reported with such simple technique.
Disciplines :
Physics
Author, co-author :
Fave, Alain;  Institut National des Sciences Appliquées de Lyon - INSA Lyon > Sciences et génie des Matériaux > Institut des Nanotechnologies de Lyon
Lelièvre, Jean-François;  Procédés, Matériaux et Energie Solaire - PROMES
GALLET, Thibaut ;  Institut National des Sciences Appliquées de Lyon - INSA Lyon > Sciences et Génie des Matériaux > Institut des Nanotechnologies de Lyon - INL
Su, Qiaoyu;  Institut des Sciences Appliquées de Lyon - INSA Lyon > Sciences et Génie des Matériaux > Institut des Nanotechnologies de Lyon - INL
Lemiti, Mustapha;  Institut des Sciences Appliquées de Lyon - INSA Lyon > Sciences et Génie des Matériaux > Institut des Nanotechnologies de Lyon - INL
External co-authors :
yes
Language :
English
Title :
Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion
Publication date :
21 September 2017
Journal title :
Energy Procedia
ISSN :
1876-6102
Publisher :
Elsevier, Amsterdam, Netherlands
Special issue title :
7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany
Volume :
124
Pages :
577-583
Peer reviewed :
Peer Reviewed verified by ORBi
Focus Area :
Physics and Materials Science
Available on ORBilu :
since 17 November 2017

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