Article (Scientific journals)
Epitaxial Cu2ZnSnSe4 thin films and devices
Redinger, Alex; Groiss, Heiko; Sendler, Jan et al.
2015In Thin Solid Films, 582, p. 193-197
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Abstract :
[en] Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1\%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved.
Disciplines :
Physics
Author, co-author :
Redinger, Alex ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Groiss, Heiko
Sendler, Jan 
Djemour, Rabie
Regesch, David
Gerthsen, Dagmar
Siebentritt, Susanne ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
External co-authors :
yes
Language :
English
Title :
Epitaxial Cu2ZnSnSe4 thin films and devices
Publication date :
2015
Journal title :
Thin Solid Films
ISSN :
0040-6090
Publisher :
Elsevier, Switzerland
Volume :
582
Pages :
193-197
Peer reviewed :
Peer Reviewed verified by ORBi
Focus Area :
Physics and Materials Science
Funders :
European Mat Res Soc
Commentary :
Symposium A on Thin Film Chalcogenide Photovoltaic Materials held at the E-MRS Spring Meeting, Lille, FRANCE, MAY 26-30, 2014
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