Epitaxial Cu2ZnSnSe4 thin films and devices

Redinger, Alex; Groiss, Heiko; Sendler, Jan; Djemour, Rabie; Regesch, David; Gerthsen, Dagmar; Siebentritt, Susanne

doi:10.1016/j.tsf.2014.11.040

Reference : Epitaxial Cu2ZnSnSe4 thin films and devices


	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	Focus Areas :	Physics and Materials Science
	To cite this reference:	http://hdl.handle.net/10993/32769

Title :	Epitaxial Cu2ZnSnSe4 thin films and devices
Language :	English
Author, co-author :	Redinger, Alex [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
	Groiss, Heiko [> >]
	Sendler, Jan []
	Djemour, Rabie [> >]
	Regesch, David [> >]
	Gerthsen, Dagmar [> >]
	Siebentritt, Susanne [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Publication date :	2015
Journal title :	THIN SOLID FILMS
Volume :	582
Pages :	193-197
Peer reviewed :	Yes (verified by ORBi^lu)
Audience :	International
ISSN :	0040-6090
Abstract :	[en] Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1\%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved.
Funders :	European Mat Res Soc
Permalink :	http://hdl.handle.net/10993/32769
DOI :	10.1016/j.tsf.2014.11.040
Commentary :	Symposium A on Thin Film Chalcogenide Photovoltaic Materials held at the E-MRS Spring Meeting, Lille, FRANCE, MAY 26-30, 2014

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