We use polarization-resolved Raman spectroscopy to assess the crystal quality of epitaxial kesterite layers. It is demonstrated for the example of epitaxial Cu2ZnSnSe4 layers on GaAs(001) that ``standing'' and ``lying'' kesterite unit cell orientations (c'-axis parallel / perpendicular to the growth direction) can be distinguished by the application of Raman tensor analysis. From the appearance of characteristic intensity oscillations when the sample is rotated one can distinguish polycrystalline and epitaxial layers. The method can be transferred to kesterite layers oriented in any crystal direction and can shed light on the growth of such layers in general. (C) 2014 Optical Society of America
Disciplines :
Physique
Auteur, co-auteur :
Krämmer, Christoph; 1Institute of Applied Physics, Karlsruhe Institute of Technology
Lang Mario; 1Institute of Applied Physics, Karlsruhe Institute of Technology
REDINGER, Alex ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Sachs, Johannes; 1Institute of Applied Physics, Karlsruhe Institute of Technology
Chao Gao; Institute of Applied Physics, Karlsruhe Institute of Technology
Kalt, Heinz; Institute of Applied Physics, Karlsruhe Institute of Technology
SIEBENTRITT, Susanne ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Hetterich, Michael; Institute of Applied Physics, Karlsruhe Institute of Technology
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
Assessment of crystal quality and unit cell orientation in epitaxial Cu2ZnSnSe4 layers using polarized Raman scattering
Date de publication/diffusion :
2014
Titre du périodique :
Optics Express
eISSN :
1094-4087
Maison d'édition :
Optical Society of America, Washington, Etats-Unis - District de Columbia
