Reference : Time resolved photoluminescence on Cu(In, Ga)Se-2 absorbers: Distinguishing degradati...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
Time resolved photoluminescence on Cu(In, Ga)Se-2 absorbers: Distinguishing degradation and trap states
Redinger, Alex mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Levcenko, Sergiu [> >]
Hages, Charles J. [> >]
Dieter, Greiner [> >]
Kaufmann, Christian A. [> >]
Unold, Thomas [> >]
Yes (verified by ORBilu)
[en] Recent reports have suggested that the long decay times in time resolved photoluminescence (TRPL), often measured in Cu(In, Ga)Se-2 absorbers may be a result of detrapping from sub-bandgap defects. In this work, we show via temperature dependent measurements, that long lifetimes >50 ns can be observed that reflect the true minority carrier lifetime not related to deep trapping. Temperature dependent time resolved photoluminescence and steady state photoluminescence imaging measurements are used to analyze the effect of annealing in air and in a nitrogen atmosphere between 300K and 350K. We show that heating the Cu(In, Ga)Se-2 absorber in air can irreversibly decrease the TRPL decay time, likely due to a deterioration of the absorber surface. Annealing in an oxygen-free environment yields a temperature dependence of the TRPL decay times in accordance with Schockley Read Hall recombination kinetics and weakly varying capture cross sections according to T-0.6. Published by AIP Publishing.

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