Reference : Laser annealing of electrodeposited CuInSe2 Semiconductor Precursors: Experiment and ...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/29582
Laser annealing of electrodeposited CuInSe2 Semiconductor Precursors: Experiment and Modeling
English
Meadows, Helen mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Misra S. [University of Utah, United States > Electrical and Computer Engineering]
Simonds B. J. [National Institute of Standards and Technology (NIST), Boulder, Colorado, USA]
Kurihara, Masato [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Schuler, Thomas mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Reis Adonis, Vicente mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Bhatia A. [University of Utah, USA > Materials Science and Engineering]
Scarpulla M. A. [University of Utah, USA > Materials Science and Engineering]
Dale, Phillip mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
2016
Journal of Materials Chemistry C
Royal Society of Chemistry
Yes
International
2050-7526
2050-7534
http://hdl.handle.net/10993/29582
10.1039/c6tc03623f
FnR ; FNR3931997 > Phillip Dale > LASER > Laser Annealing of Semiconductor Electrodeposited Reactants > 15/10/2010 > 14/10/2013 > 2009

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