[en] Cu2SnS3 is an earth abundant semiconductor
researched for photovoltaic applications. Due to the small energy
difference in the Sn2+/4+ oxidation states and low free energy of
MoS2, the Cu2SnS3/Mo interface is unstable and Cu2SnS3
decomposes. The interface is stabilized by growing Cu2SnS3 on a
thin MoS2 layer. Photoluminescence occurs only at the back of the
Cu2SnS3 layers when grown on MoS2 and no quantifiable
amounts of Cu and Sn are measured at the MoS2 substrate. The
quenching of emission of Cu2SnS3 grown on Mo is due to binary
sulfides formed in presence of Mo which are not formed when
Cu2SnS3 is grown on MoS2.
Disciplines :
Physics
Author, co-author :
DE WILD, Jessica ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
ROBERT, Erika ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
DALE, Phillip ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
External co-authors :
no
Language :
English
Title :
Chemical stability of the Cu2SnS3/Mo interface
Publication date :
June 2016
Event name :
IEEE, PVSEC
Event date :
from 4-6-2016 to 10-6-2016
Audience :
International
Focus Area :
Physics and Materials Science
FnR Project :
FNR5898466 - Earth Abundant Ternary Semiconductor For Thin Film Solar, 2013 (01/03/2014-28/02/2017) - Phillip Dale
