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Peculiarities of low frequency noise in GaN-based high electron mobility transistors
Vitusevich, S. A.; Petrychuk, M. V.; Klein, N. et al.
2003In Proceedings of 17th Internat. Conf. Noise and Fluctuations ICNF, p. 789-793
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-377
Author, co-author :
Vitusevich, S. A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Petrychuk, M. V.
Klein, N.;  Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Danylyuk, S. V.;  Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Javorka, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
MARSO, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Lüth, H.;  Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Belyaev, A. E.
Language :
English
Title :
Peculiarities of low frequency noise in GaN-based high electron mobility transistors
Publication date :
2003
Event name :
17th Internat. Conf. Noise and Fluctuations ICNF
Event date :
2003
Journal title :
Proceedings of 17th Internat. Conf. Noise and Fluctuations ICNF
Pages :
789-793
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since 24 March 2015

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