GaN-based HEMTs;; Si substrates; I –V characteristics
Abstract :
[en] Selected material and device issues related to the performance of AlGaN/GaN HEMTs on (111) Si substrates are reported. It is shown that these devices can sustain significantly higher dc power (16 W/mm) than those grown on sapphire. Consequently smaller degradation in the device performance at higher temperatures (up to 400 8C) is demonstrated. Photoionisation spectroscopy reveals trap level of 1.85 eV, additional to two another levels found before in GaN-based HEMTs prepared on sapphire. Thus, AlGaN/GaN HEMTs on Si substrates demonstrate the viability of this technology for commercial application of high power rf devices.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-350
Author, co-author :
Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Alam, A.; Aixtron AG, D-52072 Aachen, Germany
Marso, Michel ; Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Wolter, M.; Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Kuzmík, J.; Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Fox, A.; Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Heuken, M.; Aixtron AG, D-52072 Aachen, Germany
Kordoš, P.; Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Language :
English
Title :
Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates
