Reference : Ultrafast Phenomena in Freestanding LT-GaAs Devices

	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a journal
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20479

Title :	Ultrafast Phenomena in Freestanding LT-GaAs Devices
Language :	English
Author, co-author :	Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Mikulics, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany, and Max-Planck-Institut fÄur Radioastronomie, 53121 Bonn, Germany]
	Adam, R. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Wu, S. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
	Zheng, X. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
	Camara, I. [Max-Planck-Institut fÄur Radioastronomie, 53121 Bonn, Germany]
	Siebel, F. [Max-Planck-Institut fÄur Radioastronomie, 53121 Bonn, Germany]
	Förster, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Güsten, R. [Max-Planck-Institut fÄur Radioastronomie, 53121 Bonn, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Sobolewski, R. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
Publication date :	2005
Journal title :	Acta Physica Polonica A
Publisher :	Warszawa
Volume :	VOL 107; PART 1
Pages :	109-117
Peer reviewed :	Yes (verified by ORBilu)
ISSN :	0587-4246
e-ISSN :	1898-794X
City :	Państwowe Wydawnictwo Naukowe
Country :	Poland
Event name :	12th International Symposium on Ultrafast Phenomena in Semiconductors (12-UFPS)
Event date :	August 22-25, 2004
Event place (city) :	Vilnius
Event country :	Lithuania
Abstract :	[en] We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical ¯elds above 200 kV/cm and dark currents below 3 £ 10¡7 A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO2 host substrate compared to the native substrate.
Permalink :	http://hdl.handle.net/10993/20479

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