Reference : Ultrafast Phenomena in Freestanding LT-GaAs Devices
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20479
Ultrafast Phenomena in Freestanding LT-GaAs Devices
English
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Mikulics, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany, and Max-Planck-Institut fÄur Radioastronomie, 53121 Bonn, Germany]
Adam, R. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Wu, S. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
Zheng, X. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
Camara, I. [Max-Planck-Institut fÄur Radioastronomie, 53121 Bonn, Germany]
Siebel, F. [Max-Planck-Institut fÄur Radioastronomie, 53121 Bonn, Germany]
Förster, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Güsten, R. [Max-Planck-Institut fÄur Radioastronomie, 53121 Bonn, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Sobolewski, R. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
2005
Acta Physica Polonica A
Warszawa
VOL 107; PART 1
109-117
Yes (verified by ORBilu)
0587-4246
1898-794X
Państwowe Wydawnictwo Naukowe
Poland
12th International Symposium on Ultrafast Phenomena in Semiconductors (12-UFPS)
August 22-25, 2004
Vilnius
Lithuania
[en] We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical ¯elds above 200 kV/cm and dark currents below 3 £ 10¡7 A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO2 host substrate compared to the native substrate.
http://hdl.handle.net/10993/20479

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