Reference : Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs

	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20371

Title :	Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs
Language :	English
Author, co-author :	Mikulics, M. [Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstraße 22, D-38106 Braunschweig Germany and Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany]
	Michael, E. A. [Physics Institute, University of Cologne, Zuelpicherstrasse 77, D-50937 Cologne, Germany]
	Marso, Michel [Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany]
	Lepsa, M. [Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany]
	van der Hart, A. [Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany]
	Lüth, H. [Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany]
	Dewald, A. [Institute of Nuclear Physics, University of Cologne, Zuelpicherstrasse 77, D-50937 Cologne, Germany]
	Stanček, S. [Department of Nuclear Physics and Technology, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic]
	Mozolik, M. [Department of Nuclear Physics and Technology, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic]
	Kordoš, P. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic]
Publication date :	2006
Journal title :	Applied Physics Letters
Publisher :	American Institute of Physics
Volume :	89
Issue/season :	7
Pages :	071103
Peer reviewed :	Yes (verified by ORBilu)
ISSN :	0003-6951
City :	Melville
Country :	NY
Abstract :	[en] The authors report on fabrication and measurement of traveling-wave photomixers based on high energy and low dose nitrogen-ion-implanted GaAs. They used 3 MeV energy to implant N+ ions into GaAs substrates with an ion concentration dose of 3 1012 cm−2. The N+-implanted GaAs photomixers exhibit improvements in the output power in comparison with their counterparts, photomixers fabricated on low-temperature-grown GaAs. The maximal output power was 2.64 W at 850 GHz. No saturation of the output power with increased bias voltage and optical input power was observed. These characteristics make N+-implanted GaAs the material of choice for efficient high power sources of terahertz radiation.
Permalink :	http://hdl.handle.net/10993/20371
DOI :	10.1063/1.2337523

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