[en] The authors report on fabrication and measurement of traveling-wave photomixers based on high energy and low dose nitrogen-ion-implanted GaAs. They used 3 MeV energy to implant N+ ions into GaAs substrates with an ion concentration dose of 3 1012 cm−2. The N+-implanted GaAs photomixers exhibit improvements in the output power in comparison with their counterparts, photomixers fabricated on low-temperature-grown GaAs. The maximal output power was 2.64 W at 850 GHz. No saturation of the output power with increased bias voltage and optical input power was observed. These characteristics make N+-implanted GaAs the material of choice for efficient high power sources of terahertz radiation.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-380
Author, co-author :
Mikulics, M.; Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstraße 22, D-38106 Braunschweig Germany and Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany
Michael, E. A.; Physics Institute, University of Cologne, Zuelpicherstrasse 77, D-50937 Cologne, Germany
MARSO, Michel ; Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany
Lepsa, M.; Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany
van der Hart, A.; Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany
Lüth, H.; Institute of Bio- and Nanosystems, Research Center Jülich, D-52425 Jülich, Germany
Dewald, A.; Institute of Nuclear Physics, University of Cologne, Zuelpicherstrasse 77, D-50937 Cologne, Germany
Stanček, S.; Department of Nuclear Physics and Technology, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic
Mozolik, M.; Department of Nuclear Physics and Technology, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic
Kordoš, P.; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic
Language :
English
Title :
Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs
Publication date :
2006
Journal title :
Applied Physics Letters
ISSN :
0003-6951
Publisher :
American Institute of Physics, Melville, United States - New York