CuInSe2 semiconductor formation by laser annealing

Reference : CuInSe2 semiconductor formation by laser annealing


	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/10993/19131

Title :	CuInSe2 semiconductor formation by laser annealing
Language :	English
Author, co-author :	Meadows, Helen [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Regesch, David [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Thevenin, Maxime [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Sendler, Jan [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Schuler, Thomas [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Misra [University of Utah]
	Simonds [University of Utah]
	Scarpulla [University of Utah]
	Gerliz [University of Oldenburg]
	Gütay [University of Oldenburg]
	Dale, Phillip [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Publication date :	2014
Journal title :	Thin Solid Films
Peer reviewed :	Yes
Audience :	International
Permalink :	http://hdl.handle.net/10993/19131
DOI :	10.1016/2014.10.042

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