Article (Scientific journals)
Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material
Kioseoglou, Joseph; Kalesaki, Efterpi; Belabbas, Imad et al.
2011In Journal of Applied Physics, 110, p. 053715
Peer reviewed
 

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Abstract :
[en] Density functional theory calculations were performed on undoped AlN screw threading dislocations (TDs) as well as TDs doped by indium and oxygen, prompted by integrated experiments through transmission electron microscopy and spectroscopic techniques demonstrating enhanced In and O concentrations in screw dislocation cores. It is revealed that screw TDs act as conduction pathways to charge carriers, introducing multiple levels in the bandgap due to overstrained, dangling, and “wrong” bonds formed even in the undoped cores. The presence of impurities and especially metallic In elevates the metal-like electronic structure of the distorted material and promotes the conductivity along the dislocation line. Hence screw dislocations in AlN are established as highly prominent conductive nanowires in semiconducting thin films and prospects for novel, highly functional nano-device materials through exploitation of screw TDs are attested.
Research center :
Aristotle University of Thessaloniki
Disciplines :
Physics
Author, co-author :
Kioseoglou, Joseph;  Department of Physics, Aristotle University of Thessaloniki
Kalesaki, Efterpi ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Belabbas, Imad;  Chemistry Department, Abderahmane Mira University, Algeria
Chen, Jun;  Laboratoire de Recherche sur les Proprietes des Materiaux Nouveaux, Universite de Caen
Nouet, Gerard;  Centre de Recherche sur les Ions, les Materiaux et la Photonique, UMR CNRS 6252, ENSICAEN
Kirmse, Holm;  Institut fur Physik, Humboldt-Universitat zu Berlin, AG Kristallographie
Neumann, Wolfgang;  Institut fur Physik, Humboldt-Universitat zu Berlin, AG Kristallographie
Komninou, Philomela;  Department of Physics, Aristotle University of Thessaloniki
Karakostas, Theodoros;  Department of Physics, Aristotle University of Thessaloniki
Language :
English
Title :
Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material
Publication date :
15 September 2011
Journal title :
Journal of Applied Physics
ISSN :
0021-8979
Publisher :
American Institute of Physics, Melville, United States - New York
Volume :
110
Pages :
053715
Peer reviewed :
Peer reviewed
European Projects :
FP7 - 224212 - DOTSENSE - Group III-nitride quantum dots as optical transducers for chemical sensors
Name of the research project :
DOTSENSE - PARSEM (MRTN-CT-2004-005583)
Funders :
CE - Commission Européenne [BE]
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