Article (Scientific journals)
Electronic structure of 1/6⟨20-23⟩ partial dislocations in wurtzite GaN
Kioseoglou, Joseph; Kalesaki, Efterpi; Lymperakis, Liverios et al.
2011In Journal of Applied Physics, 109, p. 083511
Peer reviewed
 

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Abstract :
[en] The I1 intrinsic basal stacking faults (BSFs) are acknowledged as the principal defects observed on {11-20} (a-plane) and {1-100} (m-plane) grown GaN. Their importance is established by recent experimental results, which correlate the partial dislocations (PDs) bounding I1 BSFs to the luminescence characteristics of GaN. PDs are also found to play a critical role in the alleviation of misfit strain in hetero-epitaxially grown nonpolar and semipolar films. In the present study, the energetics and the electronic structure of twelve edge and mixed 1/6⟨20-23⟩ PD configurations are investigated by first principles calculations. The specific PD cores of the dislocation loop bounding the I1 BSF are identified for III-rich and N-rich growth conditions. The core structures of PDs induce multiple shallow and deep states, attributed to the low coordinated core atoms, indicating that the cores are electrically active. In contrast to edge type threading dislocations no strain induced states are found.
Research center :
Aristotle University of Thessaloniki
Disciplines :
Physics
Author, co-author :
Kioseoglou, Joseph;  Department of Physics, Aristotle University of Thessaloniki
Kalesaki, Efterpi ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Lymperakis, Liverios;  Computational Materials Design Department, Max-Planck-Institut fur Eisenforschung
Neugebauer, Jorg;  Computational Materials Design Department, Max-Planck-Institut fur Eisenforschung
Komninou, Philomela;  Department of Physics, Aristotle University of Thessaloniki
Karakostas, Theodoros;  Department of Physics, Aristotle University of Thessaloniki
Language :
English
Title :
Electronic structure of 1/6⟨20-23⟩ partial dislocations in wurtzite GaN
Publication date :
19 April 2011
Journal title :
Journal of Applied Physics
ISSN :
0021-8979
Publisher :
American Institute of Physics, Melville, United States - New York
Volume :
109
Pages :
083511
Peer reviewed :
Peer reviewed
European Projects :
FP7 - 224212 - DOTSENSE - Group III-nitride quantum dots as optical transducers for chemical sensors
Name of the research project :
DOTSENSE and PARSEM (MRTN-CT-2004-005583)
Funders :
CE - Commission Européenne [BE]
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