Reference : Fabrication and characterization of kesterite Cu2ZnSnS4 thin films deposited by elect...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Multidisciplinary, general & others
http://hdl.handle.net/10993/18089
Fabrication and characterization of kesterite Cu2ZnSnS4 thin films deposited by electrostatic spray assisted vapour deposition method
English
Liu, J. P. [University College London - UCL]
Choy, Kwang-Leong [University College London - UCL]
Placidi, M. [IREC-Catalonia Institute for Energy Research]
López-García, J. [IREC-Catalonia Institute for Energy Research]
Saucedo, Edgardo [IREC-Catalonia Institute for Energy Research]
Colombara, Diego mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Robert, Erika mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
2014
Physica Status Solidi A. Applications and Materials Science
Wiley-VCH Verlag
Yes (verified by ORBilu)
International
1862-6300
1862-6319
Weinheim
Germany
[en] Cu2ZnSnS4 ; Vapour deposition ; Thin films ; Kesterites ; Solar cells ; Electrospray ; CZTS
[en] Most of the high efficiency kesterite solar cells are fabricated by vacuum or hydrazine-based solution methods which have drawbacks, such as high cost, high toxicity or explosivity. In our contribution, an alternative non-vacuum and environmental friendly deposition technology called electrostatic spray assisted vapour deposition (ESAVD) has been used for the cost-effective growth of Cu2ZnSnS4 (CZTS) thin films with well controlled structure and composition. CZTS films have been characterized using a combination of XRD, XPS, SEM-EDX, AFM, and Raman spectroscopy. The results demonstrated that adherent, uniform and homogeneous CZTS films without apparent secondary phases have been produced by ESAVD. The atomic ratios measured by EDX are Cu/(Zn + Sn) = 0.88 and Zn/Sn = 1.17,which are very close with the reported high efficiency solar cells and can be finely tuned by formulating the precursor.CZTS films exhibited a typical optical band gap of 1.53 eV from UV–Vis analysis. Cu2ZnSnS4 produced by the ESAVD are being optimized towards the fabrication of high efficiency photovoltaic devices.
European Commission - EC
http://hdl.handle.net/10993/18089
10.1002/pssa.201431374
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201431374/abstract
The original publication is available at: http://onlinelibrary.wiley.com
FP7 ; 284486 - SCALENANO - Development and scale-up of nanostructured based materials and processes for low cost high efficiency chalcogenide based photovoltaics

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