Reference : Prediction of photovoltaic p-n device short circuit current by photoelectrochemical a...

	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Multidisciplinary, general & others
	To cite this reference:	http://hdl.handle.net/10993/18087

Title :	Prediction of photovoltaic p-n device short circuit current by photoelectrochemical analysis of p-type CIGSe films
Language :	English
Author, co-author :	Colombara, Diego [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Crossay, Alexandre [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Regesch, David [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Broussillou, Cedric [Nexcis, 190 av. Célestin Coq, Zone Industrielle, 13790 Rousset, France]
	Goislard de Monsabert, Thomas [Nexcis, 190 av. Célestin Coq, Zone Industrielle, 13790 Rousset, France]
	Grand, Pierre-Philippe [Nexcis, 190 av. Célestin Coq, Zone Industrielle, 13790 Rousset, France]
	Dale, Phillip [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Publication date :	Nov-2014
Journal title :	Electrochemistry Communications
Publisher :	Elsevier Science
Volume :	48
Pages :	99-102
Peer reviewed :	Yes (verified by ORBilu)
Audience :	International
ISSN :	1388-2481
City :	New York
Country :	NY
Keywords :	[en] Photocurrent spectroscopy ; Cu(In,Ga)Se2 ; Opto-electronic quality ; Photoluminescence ; Short-circuit-current ; Efficiency
Abstract :	[en] The quality control of individual semiconductor thin films during fabrication of multiple layers is important for industry and academia. The ultimate aim of this research is to predict the efficiency of p-–n junction solar cells by photoelectrochemical analysis of the bare p-type semiconductor. A linear correlation between the photocurrent measured electrochemically on Cu(In,Ga)Se2 absorber layers through a Eu3+ electrolyte junction and short circuit current and efficiency of the corresponding solid state devices is found. However, the correlation is complicated by pronounced recombination at the semiconductor/electrolyte interface, while the solid state interface behaves more ideally.
Funders :	European Union’'s Seventh Framework Programme FP7/2007-2013 under grant agreement no. 284486
Name of the research project :	F1R-PHY-PEU-11SLCN > FP7 - SCALENANO > 01/03/2012 - 30/06/2015 > DALE Phillip
Target :	Researchers ; Professionals ; Students
Permalink :	http://hdl.handle.net/10993/18087
DOI :	10.1016/j.elecom.2014.08.026
Other URL :	http://www.sciencedirect.com/science/article/pii/S1388248114002811
Mentions required by the publisher for OA :	The original publication is available at http://www.sciencedirect.com/science/article/pii/S1388248114002811
Framework Programme / European Project :	FP7 ; 284486 - SCALENANO - Development and scale-up of nanostructured based materials and processes for low cost high efficiency chalcogenide based photovoltaics

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