Reference : Band structure of boron doped carbon nanotubes
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/17597
Band structure of boron doped carbon nanotubes
English
Wirtz, Ludger mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Rubio, A. [> >]
2003
AIP Conference Proceedings
American Institute of Physics
685
MOLECULAR NANOSTRUCTURES
402-405
Yes (verified by ORBilu)
Yes
International
0094-243X
1551-7616
New York
NY
17th International Winterschool/Euroconference on Electronic Properties of Novel Materials
8 - 15 March 2003
[en] We present ab initio and self-consistent tight-binding calculations on the band structure of single wall semiconducting carbon nanotubes with high degrees (up to 25 %) of boron substitution. Besides a lowering of the Fermi energy into the valence band, a regular, periodic distribution of the p-dopants leads to the formation of a dispersive "acceptor"-like band in the band gap of the undoped tube. This comes from the superposition of acceptor levels at the boron atoms with the delocalized carbon pi-orbitals. Irregular (random) boron-doping leads to a high concentration of hybrids of acceptor and unoccupied carbon states above the Fermi edge.
http://hdl.handle.net/10993/17597
0-7354-0154-3
MAR 08-15, 2003
17th International Winterschool/Euroconference on Electronic Properties of Novel Materials
Kirchberg
AUSTRIA
Kuzmany, H Fink, J Mehring, M Roth, S
Univ Wein, Inst Mat, Bruker, Analytis Mebtech GmbH, Credit Anstalt BankVerein, Electrovac GmbH, Jobin Yvon GmbH, Nanocyl SA, Omicron Vakuumphys GmbH

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