Reference : Electronic structure and optical properties of boron doped single-wall carbon nanotubes

	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a journal
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/10993/17595

Title :	Electronic structure and optical properties of boron doped single-wall carbon nanotubes
Language :	English
Author, co-author :	Pichler, T. [Leibniz Institute for Solid State and Materials Research Dresden]
	Borowiak-Palen, E. [Leibniz Institute for Solid State and Materials Research Dresden]
	Fuentes, G. G. [Leibniz Institute for Solid State and Materials Research Dresden]
	Knupfer, M. [Leibniz Institute for Solid State and Materials Research Dresden]
	Graff, A. [Leibniz Institute for Solid State and Materials Research Dresden]
	Fink, J. [Leibniz Institute for Solid State and Materials Research Dresden]
	Wirtz, Ludger [Department of Material Physics, University of the Basque Country / Donostia International Physics Center]
	Rubio, A. [Department of Material Physics, University of the Basque Country / Donostia International Physics Center]
Publication date :	2003
Journal title :	AIP Conference Proceedings
Publisher :	American Institute of Physics
Volume :	685
Special issue title :	MOLECULAR NANOSTRUCTURES
Pages :	361-365
Peer reviewed :	Yes (verified by ORBilu)
On invitation :	Yes
Audience :	International
ISSN :	0094-243X
e-ISSN :	1551-7616
City :	New York
Country :	NY
Event name :	17th International Winterschool/Euroconference on Electronic Properties of Novel Materials
Event date :	8 - 15 March 2003
Abstract :	[en] We present a study of the electronic structure and the optical properties of boron doped single walled carbon nanotubes which have been produced by a substitution reaction from nanotube templates. The morphology and crystal structure of the samples have been characterized by transmission electron microscopy and electron energy-loss spectroscopy. Clean boron doped SWCNT with an average boron content of 15 at% have been produced. The B1s and C1s core level spectra reveal that boron is in an sp(2) configuration and that the effective charge transfer is about 0.5 holes per boron to the C-derived states. The boron substitution also leads to new features in the optical absorption spectra which can be attributed to the appearance of an acceptor band about 0.1 eV above the top of the valence band of the SWCNT. These changes in the electronic structure and in the optical properties upon boron substitution are in good agreement with state of the art ab initio calculations.
Permalink :	http://hdl.handle.net/10993/17595
DOI :	10.1063/1.1628050
Commentary :	0-7354-0154-3 MAR 08-15, 2003 17th International Winterschool/Euroconference on Electronic Properties of Novel Materials Kirchberg AUSTRIA Kuzmany, H Fink, J Mehring, M Roth, S Univ Wein, Inst Mat, Bruker, Analytis Mebtech GmbH, Credit Anstalt BankVerein, Electrovac GmbH, Jobin Yvon GmbH, Nanocyl SA, Omicron Vakuumphys GmbH

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