[en] Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer layers prepared at normal and low temperatures. All devices made on LT buffer layers had saturated channel currents which were about 20% of similar devices on a normal buffer. An attempt was made to remove Ga vacanciies from the LT buffer by a high temperature anneal step before the epitaxial layer was prepared. This had no effect in increasing the channel current. In all cases the pinchoiy voltage was unchanged indicating constancy of the channel thickness and donor concentration. It is concluded that the loss of current is due to a loss of mobile charge through trapping.
Disciplines :
Ingénierie électrique & électronique
Auteur, co-auteur :
Borouriand, Farahd; King's College London, Strand
JOSTOCK, Markus ; University of Luxembourg > Interdisciplinary Centre for Security, Reliability and Trust (SNT)
Hopkinson, M; University of Sheffield
Kordos, P; KFA-Jülich
Weber, E; University of California
Swanson, J.G.; King's College London, Strand
Langue du document :
Anglais
Titre :
The electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers
Date de publication/diffusion :
24 novembre 1997
Nom de la manifestation :
Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications
Organisateur de la manifestation :
EDMO
Lieu de la manifestation :
London, Royaume-Uni
Date de la manifestation :
24-25. November 1997
Titre du périodique :
High Performance Electron Devices for Microwave and Optoelectronic Applications
Titre particulier du numéro :
Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications
