The electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers

Borouriand, Farahd; Jostock, Markus; Hopkinson, M; Kordos, P; Weber, E; Swanson, J.G.

doi:10.1109/EDMO.1997.668623

Reference : The electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buff...


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a journal
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/16028

Title :	The electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers
Language :	English
Author, co-author :	Borouriand, Farahd [King's College London, Strand]
	Jostock, Markus [University of Luxembourg > Interdisciplinary Centre for Security, Reliability and Trust (SNT) > >]
	Hopkinson, M [University of Sheffield]
	Kordos, P [KFA-Jülich]
	Weber, E [University of California]
	Swanson, J.G. [King's College London, Strand]
Publication date :	24-Nov-1997
Journal title :	High Performance Electron Devices for Microwave and Optoelectronic Applications
Special issue title :	Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications
Pages :	303-308
Peer reviewed :	Yes
On invitation :	No
Event name :	Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications
Event date :	24-25. November 1997
Event organizer :	EDMO
Event place (city) :	London
Event country :	UK
Keywords :	[en] MESFET ; GaAs
Abstract :	[en] Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer layers prepared at normal and low temperatures. All devices made on LT buffer layers had saturated channel currents which were about 20% of similar devices on a normal buffer. An attempt was made to remove Ga vacanciies from the LT buffer by a high temperature anneal step before the epitaxial layer was prepared. This had no effect in increasing the channel current. In all cases the pinchoiy voltage was unchanged indicating constancy of the channel thickness and donor concentration. It is concluded that the loss of current is due to a loss of mobile charge through trapping.
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/10993/16028
DOI :	10.1109/EDMO.1997.668623

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