[en] We report on Raman measurements of single- and few-layer graphene flakes. Raman mapping in combination with scanning force microscopy allows us to locally relate the thickness of the graphite flake with the spectral properties. It turns out that the width of the D' line is highly sensitive to the transition from single- to double-layer graphene. The defect-induced D line is found to be most prominent at steps between sections of different height and along the edge of the graphite flake.
Disciplines :
Physics
Author, co-author :
Graf, Davy
Molitor, Francoise
Ensslin, Klaus
Stampfer, Christoph
Jungen, Alain
Hierold, Christofer
WIRTZ, Ludger ; Institut d'électronique de microélectronique et de nanotechnologie = Institute for Electronics, Microelectronics, and Nanotechnology - IEMN > ISEN
Language :
English
Title :
Raman spectroscopy on single- and few-layer graphene
Publication date :
2007
Event name :
28th International Conference on the Physics of Semiconductors (ICPS-28)
Event place :
Vienna, Austria
Event date :
JUL 24-28, 2006
Audience :
International
Journal title :
AIP Conference Proceedings
ISSN :
0094-243X
eISSN :
1551-7616
Publisher :
American Institute of Physics, New York, United States - New York
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