Reference : Raman spectroscopy on single- and few-layer graphene
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/12166
Raman spectroscopy on single- and few-layer graphene
English
Graf, Davy [> >]
Molitor, Francoise [> >]
Ensslin, Klaus [> >]
Stampfer, Christoph [> >]
Jungen, Alain [> >]
Hierold, Christofer [> >]
Wirtz, Ludger mailto [Institut d'électronique de microélectronique et de nanotechnologie = Institute for Electronics, Microelectronics, and Nanotechnology - IEMN > ISEN]
2007
AIP Conference Proceedings
American Institute of Physics
893
PHYSICS OF SEMICONDUCTORS, PTS A AND B
623-624
Yes (verified by ORBilu)
International
0094-243X
1551-7616
New York
NY
28th International Conference on the Physics of Semiconductors (ICPS-28)
JUL 24-28, 2006
Vienna
Austria
[en] We report on Raman measurements of single- and few-layer graphene flakes. Raman mapping in combination with scanning force microscopy allows us to locally relate the thickness of the graphite flake with the spectral properties. It turns out that the width of the D' line is highly sensitive to the transition from single- to double-layer graphene. The defect-induced D line is found to be most prominent at steps between sections of different height and along the edge of the graphite flake.
http://hdl.handle.net/10993/12166

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