| Reference : Raman spectroscopy on single- and few-layer graphene |
| Scientific congresses, symposiums and conference proceedings : Paper published in a journal | |||
| Physical, chemical, mathematical & earth Sciences : Physics | |||
| http://hdl.handle.net/10993/12166 | |||
| Raman spectroscopy on single- and few-layer graphene | |
| English | |
| Graf, Davy [> >] | |
| Molitor, Francoise [> >] | |
| Ensslin, Klaus [> >] | |
| Stampfer, Christoph [> >] | |
| Jungen, Alain [> >] | |
| Hierold, Christofer [> >] | |
Wirtz, Ludger  [Institut d'électronique de microélectronique et de nanotechnologie = Institute for Electronics, Microelectronics, and Nanotechnology - IEMN > ISEN] | |
| 2007 | |
| AIP Conference Proceedings | |
| American Institute of Physics | |
| 893 | |
| PHYSICS OF SEMICONDUCTORS, PTS A AND B | |
| 623-624 | |
| Yes (verified by ORBilu) | |
| International | |
| 0094-243X | |
| 1551-7616 | |
| New York | |
| NY | |
| 28th International Conference on the Physics of Semiconductors (ICPS-28) | |
| JUL 24-28, 2006 | |
| Vienna | |
| Austria | |
| [en] We report on Raman measurements of single- and few-layer graphene flakes. Raman mapping in combination with scanning force microscopy allows us to locally relate the thickness of the graphite flake with the spectral properties. It turns out that the width of the D' line is highly sensitive to the transition from single- to double-layer graphene. The defect-induced D line is found to be most prominent at steps between sections of different height and along the edge of the graphite flake. | |
| http://hdl.handle.net/10993/12166 |
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