| Reference : Light emitting source and method for emitting light based on boron nitride nanotubes |
| Patent : Patent | |||
| Physical, chemical, mathematical & earth Sciences : Physics | |||
| http://hdl.handle.net/10993/11403 | |||
| Light emitting source and method for emitting light based on boron nitride nanotubes | |
| English | |
| Rubio, Angel [] | |
| Attacalite, Claudio [] | |
Wirtz, Ludger  [] | |
| 30-Aug-2012 | |
| 2012-02-22 | |
| World Intellectual Property Organization | |
| PCT/ES2012/070098 | |
| P201130228 | |
| B | |
| World | |
| UNIVERSIDAD DEL PAIS VASCO-EUSKAL HERRIKO UNIBERTSITATEA | |
| RUBIO SECADES, Angel | |
| ATTACCALITE, Claudio | |
| WIRTZ, Ludger | |
| B82Y 30/00 (2011.01), B82Y 20/00 (2011.01) | |
| B82Y 30/00 (2011.01), B82Y 20/00 (2011.01) | |
| AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. African Regional Intellectual Property Org. (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (EAPO) (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM) European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR) African Intellectual Property Organization (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). | |
| AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | |
| [en] The invention relates to a controllable frequency, broad spectrum light emitting source that includes boron nitride nanotubes with defects produced by the absence of a boron atom in the tubular structure and wherein the source is additionally provided with a means for generating an electrical field perpendicular to the tube. The invention may be used as a field effect transistor (adding electrodes) or as a source of conversion of energy of an incident bundle. | |
| http://hdl.handle.net/10993/11403 | |
| http://patentscope.wipo.int/search/en/WO2012113955 |
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