[en] We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line-the most significant Raman peak to identify single-layer graphene-as a function of charging up to vertical bar n vertical bar approximate to 4x10(12) cm(-2). Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the linewidth of the 2D line is, in contrast to the G line, doping independent making this quantity a reliable measure for identifying single-layer graphene. (C) 2007 American Institute of Physics.
Disciplines :
Physics
Author, co-author :
Stampfer, C.; ETH Zurich > Solid State Physics Laboratory
Molitor, F.; ETH Zurich > Solid State Physics Laboratory
Graf, D.; ETH Zurich > Solid State Physics Laboratory
Ensslin, K.; ETH Zurich > Solid State Physics Laboratory
Jungen, A.; ETH Zurich > Micro and Nanosystems
Hierold, C.; ETH Zurich > Micro and Nanosystems
WIRTZ, Ludger ; Institute for Electronics, Microelectronics, and Nanotechnology (CNRS UMR-8520), Department ISEN, Villeneuve d’Ascq, France / European Theoretical Spectroscopy Facility (ETSF), San Sebastián, Spain
Language :
English
Title :
Raman imaging of doping domains in graphene on SiO(2)
Publication date :
2007
Journal title :
Applied Physics Letters
ISSN :
0003-6951
Publisher :
American Institute of Physics, Melville, United States - New York