Reference : Raman imaging of doping domains in graphene on SiO(2)
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Raman imaging of doping domains in graphene on SiO(2)
Stampfer, C. [ETH Zurich > Solid State Physics Laboratory]
Molitor, F. [ETH Zurich > Solid State Physics Laboratory]
Graf, D. [ETH Zurich > Solid State Physics Laboratory]
Ensslin, K. [ETH Zurich > Solid State Physics Laboratory]
Jungen, A. [ETH Zurich > Micro and Nanosystems]
Hierold, C. [ETH Zurich > Micro and Nanosystems]
Wirtz, Ludger mailto [Institute for Electronics, Microelectronics, and Nanotechnology (CNRS UMR-8520), Department ISEN, Villeneuve d’Ascq, France / European Theoretical Spectroscopy Facility (ETSF), San Sebastián, Spain]
Applied Physics Letters
American Institute of Physics
Yes (verified by ORBilu)
[en] We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line-the most significant Raman peak to identify single-layer graphene-as a function of charging up to vertical bar n vertical bar approximate to 4x10(12) cm(-2). Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the linewidth of the 2D line is, in contrast to the G line, doping independent making this quantity a reliable measure for identifying single-layer graphene. (C) 2007 American Institute of Physics.

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