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Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors
Marso, Michel; Bernát, J.; Javorka, P. et al.
2005In Physica Status Solidi C. Current Topics in Solid State Physics, 2 (7), p. 2611-2614

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122_pss_c_2_2005_2611-2614.pdf

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