Reference : Controlling electrical and optical properties of zinc oxide thin films grown by therm...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/45520
Controlling electrical and optical properties of zinc oxide thin films grown by thermal atomic layer deposition with oxygen gas
English
Nguyen, Tai [> >]
Adjeroud, Noureddine [> >]
Guennou, Mael mailto [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS)]
Guillot, Jérôme [> >]
Fleming, Yves mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) >]
Papon, Anne-Marie [> >]
Arl, Didier [> >]
Menguelti, Kevin [> >]
Joly, Raoul [> >]
Gambacorti, Narciso [> >]
Polesel-Maris, Jérôme [> >]
2-Apr-2020
Results in Materials
6
100088
Yes
International
2590-048X
[en] Zinc oxide thin film ; Atomic layer deposition ; Oxygen chemisorption ; Polar surface stabilization ; Electrical properties ; Optical properties
[en] The preparation of ZnO thin films with controlled electrical resistivity and optical properties is often challenged by the presence of defects, such as oxygen vacancies or interstitial zinc. Here, we investigate the material properties of ZnO polycrystalline thin films prepared by thermal Atomic Layer Deposition (ALD) with the presence of molecular oxygen pulsing during the growth. By means of structural, electrical and optical characterizations, we identify key growth parameters of this unusual ALD process. Unexpectedly, the influence of oxygen molecules on the crystallography, microstructure and morphology of ZnO films is significant from hundred-nanometers to micrometer thick film. The electrical resistivity of the films grown with oxygen gas shows a dramatic increase from 3 to 4 orders of magnitude. Additionally, photoluminescence measurements reveal that deep-level emissions caused by defects located deep in the band gap can be reduced by applying an adequate pulsing of oxygen gas during the process. Finally, we conclude with a discussion about the degree of consistency between the chemical composition, the inner strain and the optical and electrical properties of the films obtained with the different thermodynamic parameters of growth. Several hypotheses are discussed in order to understand the dominance of (002) orientation in the presence of oxygen during the ALD growth process.
Luxembourg Institute of Science & Technology - LIST
Fonds National de la Recherche - FnR
http://hdl.handle.net/10993/45520
10.1016/j.rinma.2020.100088
http://www.sciencedirect.com/science/article/pii/S2590048X20300303
FnR ; FNR10935404 > Susanne Siebentritt > MASSENA > MAterials for SenSing and ENergy hArvesting > 01/10/2016 > 31/03/2023 > 2016

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Open access
1-s2.0-S2590048X20300303-main.pdfPublisher postprint4.82 MBView/Open

Additional material(s):

File Commentary Size Access
Open access
1-s2.0-S2590048X20300303-mmc1.docx4.57 MBView/Open

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.