Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1\%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved.
Disciplines :
Physique
Auteur, co-auteur :
REDINGER, Alex ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
SIEBENTRITT, Susanne ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
Epitaxial Cu2ZnSnSe4 thin films and devices
Date de publication/diffusion :
2015
Titre du périodique :
Thin Solid Films
ISSN :
0040-6090
Maison d'édition :
Elsevier, Suisse
Volume/Tome :
582
Pagination :
193-197
Peer reviewed :
Peer reviewed vérifié par ORBi
Focus Area :
Physics and Materials Science
Organisme subsidiant :
European Mat Res Soc
Commentaire :
Symposium A on Thin Film Chalcogenide Photovoltaic Materials held at the E-MRS Spring Meeting, Lille, FRANCE, MAY 26-30, 2014
