Reference : Effect of edge threading dislocations on the electronic structure of InN
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/18682
Effect of edge threading dislocations on the electronic structure of InN
English
Kalesaki, Efterpi mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit > ; Aristotle University of Thessaloniki > Department of Physics]
Kioseoglou, Joseph [Aristotle University of Thessaloniki > Department of Physics]
Lymperakis, Liverios [Max-Planck-Institut für Eisenforschung > Department of Computational Materials Design]
Komninou, Philomela [Aristotle University of Thessaloniki > Department of Physics]
Karakostas, Theodoros [Aristotle University of Thessaloniki > Department of Physics]
15-Feb-2011
Applied Physics Letters
American Institute of Physics
98
7
072103
Yes (verified by ORBilu)
International
0003-6951
Melville
NY
[en] The open issue of the n-type conductivity and its correlation to threading dislocations (TDs) in InN is addressed through first principles calculations on the electronic properties of a-edge TDs. All possible dislocation core models are considered (4-, 5/7-, and 8-atom cores) and are found to modify the band structure of InN in a distinct manner. In particular, nitrogen and indium low coordinated atoms in the eight-atom core induce states near the valence band maximum and above the conduction band minimum, respectively. The formation of a nitrogen–nitrogen “wrong” bond is observed at the 5/7-atom core resulting in a state inside the band gap. The 4- and 5/7-atom cores induce occupied states resonant in the conduction band due to In–In strain induced interactions and wrong bonds, respectively. These occupied states designate TDs as a source of higher electron concentrations in InN and provide direct evidence that TDs contribute to its inherent n-type conductivity.
Aristotle University of Thessaloniki
European Commission - EC
DOTSENSE
Researchers ; Professionals ; Students ; General public ; Others
http://hdl.handle.net/10993/18682
10.1063/1.3553772
http://scitation.aip.org/content/aip/journal/apl/98/7/10.1063/1.3553772
FP7 ; 224212 - DOTSENSE - Group III-nitride quantum dots as optical transducers for chemical sensors

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