Reference : Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/18681
Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN
English
Dimitrakopulos, George [Department of Physics, Aristotle University of Thessaloniki]
Kalesaki, Efterpi mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Kioseoglou, Joseph [Department of Physics, Aristotle University of Thessaloniki]
Kehagias, Thomas [Department of Physics, Aristotle University of Thessaloniki]
Lotsari, Antiopi [Department of Physics, Aristotle University of Thessaloniki]
Lahourcade, Lise [CEA-CNRS Group “Nanophysique et Semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble]
Monroy, Eva [CEA-CNRS Group “Nanophysique et Semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble]
Hausler, Ines [Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie]
Kirmse, Holm [Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie]
Neumann, Wolfgang [Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie]
Jurczak, Gregor [Institute of Fundamental Technological Research of the Polish Academy of Sciences]
Young, Toby David [Institute of Fundamental Technological Research of the Polish Academy of Sciences]
Dłużewski, Pavel []
Komninou, Philomela [Department of Physics, Aristotle University of Thessaloniki]
Karakostas, Theodoros [Department of Physics, Aristotle University of Thessaloniki]
17-Nov-2010
Journal of Applied Physics
American Institute of Physics
108
104304
Yes (verified by ORBilu)
International
0021-8979
Melville
NY
[en] GaN quantum dots (QDs) grown in semipolar (11-22) AlN by plasma-assisted molecular-beam
epitaxy were studied by transmission electron microscopy (TEM) and scanning transmission
electron microscopy techniques. The embedded (11-22)-grown QDs exhibited pyramidal or
truncated-pyramidal morphology consistent with the symmetry of the nucleating plane, and were delimited by nonpolar and semipolar nanofacets. It was also found that, in addition to the (11-22) surface, QDs nucleated at depressions comprising {10-11} facets. This was justified by ab initio density functional theory calculations showing that such GaN/AlN facets are of lower energy compared to (11-22). Based on quantitative high-resolution TEM strain measurements, the three-dimensional QD strain state was analyzed using finite-element simulations. The internal electrostatic field was then estimated, showing small potential drop along the growth direction, and limited localization at most QD interfaces.
Aristotle University of Thessaloniki
European Commission - EC
DOTSENSE
Researchers ; Professionals ; Students ; General public ; Others
http://hdl.handle.net/10993/18681
10.1063/1.3506686
http://scitation.aip.org/content/aip/journal/jap/108/10/10.1063/1.3506686
FP7 ; 224212 - DOTSENSE - Group III-nitride quantum dots as optical transducers for chemical sensors

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