Article (Scientific journals)
Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN
Dimitrakopulos, George; Kalesaki, Efterpi; Kioseoglou, Joseph et al.
2010In Journal of Applied Physics, 108, p. 104304
Peer reviewed
 

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Abstract :
[en] GaN quantum dots (QDs) grown in semipolar (11-22) AlN by plasma-assisted molecular-beam epitaxy were studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy techniques. The embedded (11-22)-grown QDs exhibited pyramidal or truncated-pyramidal morphology consistent with the symmetry of the nucleating plane, and were delimited by nonpolar and semipolar nanofacets. It was also found that, in addition to the (11-22) surface, QDs nucleated at depressions comprising {10-11} facets. This was justified by ab initio density functional theory calculations showing that such GaN/AlN facets are of lower energy compared to (11-22). Based on quantitative high-resolution TEM strain measurements, the three-dimensional QD strain state was analyzed using finite-element simulations. The internal electrostatic field was then estimated, showing small potential drop along the growth direction, and limited localization at most QD interfaces.
Research center :
Aristotle University of Thessaloniki
Disciplines :
Physics
Author, co-author :
Dimitrakopulos, George;  Department of Physics, Aristotle University of Thessaloniki
Kalesaki, Efterpi ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit
Kioseoglou, Joseph;  Department of Physics, Aristotle University of Thessaloniki
Kehagias, Thomas;  Department of Physics, Aristotle University of Thessaloniki
Lotsari, Antiopi;  Department of Physics, Aristotle University of Thessaloniki
Lahourcade, Lise;  CEA-CNRS Group “Nanophysique et Semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble
Monroy, Eva;  CEA-CNRS Group “Nanophysique et Semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble
Hausler, Ines;  Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie
Kirmse, Holm;  Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie
Neumann, Wolfgang;  Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie
Jurczak, Gregor;  Institute of Fundamental Technological Research of the Polish Academy of Sciences
Young, Toby David;  Institute of Fundamental Technological Research of the Polish Academy of Sciences
Dłużewski, Pavel
Komninou, Philomela;  Department of Physics, Aristotle University of Thessaloniki
Karakostas, Theodoros;  Department of Physics, Aristotle University of Thessaloniki
More authors (5 more) Less
Language :
English
Title :
Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN
Publication date :
17 November 2010
Journal title :
Journal of Applied Physics
ISSN :
0021-8979
Publisher :
American Institute of Physics, Melville, United States - New York
Volume :
108
Pages :
104304
Peer reviewed :
Peer reviewed
European Projects :
FP7 - 224212 - DOTSENSE - Group III-nitride quantum dots as optical transducers for chemical sensors
Name of the research project :
DOTSENSE
Funders :
CE - Commission Européenne [BE]
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