Reference : Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN |
Scientific journals : Article | |||
Physical, chemical, mathematical & earth Sciences : Physics | |||
http://hdl.handle.net/10993/18681 | |||
Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN | |
English | |
Dimitrakopulos, George [Department of Physics, Aristotle University of Thessaloniki] | |
Kalesaki, Efterpi ![]() | |
Kioseoglou, Joseph [Department of Physics, Aristotle University of Thessaloniki] | |
Kehagias, Thomas [Department of Physics, Aristotle University of Thessaloniki] | |
Lotsari, Antiopi [Department of Physics, Aristotle University of Thessaloniki] | |
Lahourcade, Lise [CEA-CNRS Group “Nanophysique et Semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble] | |
Monroy, Eva [CEA-CNRS Group “Nanophysique et Semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble] | |
Hausler, Ines [Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie] | |
Kirmse, Holm [Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie] | |
Neumann, Wolfgang [Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie] | |
Jurczak, Gregor [Institute of Fundamental Technological Research of the Polish Academy of Sciences] | |
Young, Toby David [Institute of Fundamental Technological Research of the Polish Academy of Sciences] | |
Dłużewski, Pavel [] | |
Komninou, Philomela [Department of Physics, Aristotle University of Thessaloniki] | |
Karakostas, Theodoros [Department of Physics, Aristotle University of Thessaloniki] | |
17-Nov-2010 | |
Journal of Applied Physics | |
American Institute of Physics | |
108 | |
104304 | |
Yes (verified by ORBilu) | |
International | |
0021-8979 | |
Melville | |
NY | |
[en] GaN quantum dots (QDs) grown in semipolar (11-22) AlN by plasma-assisted molecular-beam
epitaxy were studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy techniques. The embedded (11-22)-grown QDs exhibited pyramidal or truncated-pyramidal morphology consistent with the symmetry of the nucleating plane, and were delimited by nonpolar and semipolar nanofacets. It was also found that, in addition to the (11-22) surface, QDs nucleated at depressions comprising {10-11} facets. This was justified by ab initio density functional theory calculations showing that such GaN/AlN facets are of lower energy compared to (11-22). Based on quantitative high-resolution TEM strain measurements, the three-dimensional QD strain state was analyzed using finite-element simulations. The internal electrostatic field was then estimated, showing small potential drop along the growth direction, and limited localization at most QD interfaces. | |
Aristotle University of Thessaloniki | |
European Commission - EC | |
DOTSENSE | |
Researchers ; Professionals ; Students ; General public ; Others | |
http://hdl.handle.net/10993/18681 | |
10.1063/1.3506686 | |
http://scitation.aip.org/content/aip/journal/jap/108/10/10.1063/1.3506686 | |
FP7 ; 224212 - DOTSENSE - Group III-nitride quantum dots as optical transducers for chemical sensors |
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