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![]() ; ; et al in Journal of Physics and Chemistry of Solids (2023), 173(111092), 111092 Lead vanadate PbVO3 is a polar crystal with a P4mm space group under ambient conditions. PbVO3 is isostructural with the model soft mode-driven ferroelectric PbTiO3, but it differs due to the so-called ... [more ▼] Lead vanadate PbVO3 is a polar crystal with a P4mm space group under ambient conditions. PbVO3 is isostructural with the model soft mode-driven ferroelectric PbTiO3, but it differs due to the so-called “supertetragonal” elongation of its unit cell. In this study, we investigated the lattice dynamics of PbVO3 based on Raman spectroscopy at room temperature and first-principle calculations. All zone-center transverse optical phonon modes were identified by polarized, angle-dependent Raman spectroscopy and assigned as follows: E modes at 136, 269, 374, and 508 cm−1; A1 modes at 188, 429, and 874 cm−1, and B1 mode at 319 cm−1. The calculations confirmed the experimental symmetry assignment and allowed us to obtain the longitudinal optical phonon wavenumbers. In addition, we analyzed the mode eigenvectors in detail in order to identify the atomic displacements associated with each mode and compare them with PbTiO3. Despite differences in chemistry and strain, the phonon eigenvectors were found to be highly comparable in both compounds. We investigated the position of the ferroelectric soft mode in PbVO3 compared with PbTiO3. Sizeable splitting of the B1+E modes appeared as a characteristic feature of supertetragonal phases. The peculiarity of the vanadyl V–O bond frequency in PbVO3 was also addressed. [less ▲] Detailed reference viewed: 38 (2 UL)![]() Biswas, Pranab ![]() in Physical Review Materials (2022), 6(9), 091403 The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a nonpolar to a polar phase by an electric field. Here, we investigate the ... [more ▼] The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a nonpolar to a polar phase by an electric field. Here, we investigate the effect of this field-induced phase transition on the birefringence change of PbZr0.95Ti0.05O3. We use a transparent polycrystalline PbZr0.95Ti0.05O3 film grown on PbTiO3/HfO2/SiO2 with interdigitated electrodes to directly investigate changes in birefringence in a simple transmission geometry. In spite of the polycrystalline nature of the film and its moderate thickness, the field-induced transition produces a sizable effect observable under a polarized microscope. The film in its polar phase is found to behave like a homogeneous birefringent medium. The time evolution of this field-induced birefringence provides information about irreversibilities in the antiferroelectric switching process and its slow dynamics. The change in birefringence has two main contributions: One that responds briskly and a slower one that rises and saturates over a period of as long as 30 min. Possible origins for this long saturation and relaxation times are discussed. [less ▲] Detailed reference viewed: 43 (5 UL)![]() Toulouse, Constance ![]() in PHYSICAL REVIEW B (2022), 106(6), 064105-10 In this paper, we revisit the high pressure behavior of BaZrO3 by a combination of first-principle calculations, Raman spectroscopy and x-ray diffraction under high pressure. We confirm experimentally the ... [more ▼] In this paper, we revisit the high pressure behavior of BaZrO3 by a combination of first-principle calculations, Raman spectroscopy and x-ray diffraction under high pressure. We confirm experimentally the cubic-to -tetragonal transition at 10 GPa and find no evidence for any other phase transition up to 45 GPa, the highest pressures investigated, at variance with past reports. We reinvestigate phase stability with density functional theory considering not only the known tetragonal (I4/mcm) phase but also other potential antiferrodistortive candidates. This shows that the tetragonal phase becomes progressively more stable upon increasing pressure as compared to phases with more complex tilt systems. The possibility for a second transition to another tilted phase at higher pressures, and in particular to the very common orthorhombic Pnma structure, is therefore ruled out. [less ▲] Detailed reference viewed: 26 (4 UL)![]() ; ; Guennou, Mael ![]() in SCIENTIFIC REPORTS (2022), 12(1), 9697-14 We investigate the interplay of magnetization and lattice vibrations in rare-earth orthoferrites RFeO3, with a specific focus on non-symmetry-breaking anomalies. To do so, we study the magnetization ... [more ▼] We investigate the interplay of magnetization and lattice vibrations in rare-earth orthoferrites RFeO3, with a specific focus on non-symmetry-breaking anomalies. To do so, we study the magnetization, magnon excitations and lattice dynamics as a function of temperature in NdFeO3, TbFeO3, EuFeO3 and GdFeO3. The magnetization shows distinct temperature anomalous behavior for all investigated rare-earth orthoferrites, even in the compounds with no phase transitions occurring at those temperatures. Through spin-phonon coupling, these magnetic changes are mirrored by the FeO6 rotation mode for all the studied RFeO3, revealing a common magnetostructural effect associated with the octahedra rotations. The R3+ oscillation modes evidence a Fe3+/R3+ spins cross-talk for the NdFeO3 and TbFeO3 cases. Our work sheds light into the common magnetostructural coupling in rare-earth orthoferrites, and the important role of magnetic anisotropy and spin-orbit coupling strength of the R-Fe interactions on the spin-reorientation transition at high temperatures. [less ▲] Detailed reference viewed: 47 (1 UL)![]() ; Guennou, Mael ![]() in NATURE COMMUNICATIONS (2022), 13(1), 443-7 Typically, magnetic phenomena result from the spontaneous order of the sublattices. Here, the cross-talk of two magnetic ions gives rise to an intrinsic, yet non-spontaneous ordering and manifests as ... [more ▼] Typically, magnetic phenomena result from the spontaneous order of the sublattices. Here, the cross-talk of two magnetic ions gives rise to an intrinsic, yet non-spontaneous ordering and manifests as emergent strong spin-phonon coupling in SmFeO3. Many material properties such as superconductivity, magnetoresistance or magnetoelectricity emerge from the non-linear interactions of spins and lattice/phonons. Hence, an in-depth understanding of spin-phonon coupling is at the heart of these properties. While most examples deal with one magnetic lattice only, the simultaneous presence of multiple magnetic orderings yield potentially unknown properties. We demonstrate a strong spin-phonon coupling in SmFeO3 that emerges from the interaction of both, iron and samarium spins. We probe this coupling as a remarkably large shift of phonon frequencies and the appearance of new phonons. The spin-phonon coupling is absent for the magnetic ordering of iron alone but emerges with the additional ordering of the samarium spins. Intriguingly, this ordering is not spontaneous but induced by the iron magnetism. Our findings show an emergent phenomenon from the non-linear interaction by multiple orders, which do not need to occur spontaneously. This allows for a conceptually different approach in the search for yet unknown properties. [less ▲] Detailed reference viewed: 48 (1 UL)![]() ; ; et al in APL MATERIALS (2021), 9(2), Antiferroelectric PbHfO3 is grown from atomic layer deposition precursors lead bis(dimethylaminomethylpropanolate) and tetrakis dimethylamino hafnium with H2O and O-3 oxidizers in thicknesses from 20 nm ... [more ▼] Antiferroelectric PbHfO3 is grown from atomic layer deposition precursors lead bis(dimethylaminomethylpropanolate) and tetrakis dimethylamino hafnium with H2O and O-3 oxidizers in thicknesses from 20 nm to 200 nm at a substrate temperature of 250 degrees C. X-ray analysis shows an as-grown crystalline PbO phase that diffuses into an amorphous HfO2 matrix upon annealing to form a randomly oriented, orthorhombic PbHfO3 thin film. Electrical characterization reveals characteristic double hysteresis loops with maximum polarizations of around 30 mu C/cm(2) and transition fields of 350 kV/cm-500 kV/cm depending on the thickness. Temperature-dependent permittivity and polarization testing show a phase transition at 185 degrees C, most probably to the paraelectric phase, but give no clear evidence for the intermediate phase known from bulk PbHfO3. The energy storage density for the films reaches 16 J/cm(3) at 2 MV/cm. A dielectric tunability of 221 is available within 1 V for the thinnest film. These results highlight the unique spectrum of properties available for thin film perovskite antiferroelectrics. [less ▲] Detailed reference viewed: 48 (1 UL)![]() ; ; Toulouse, Constance ![]() in APL MATERIALS (2021), 9(8), A strong coupling of the lattice to functional properties is observed in many transition metal oxide systems, such as the ABO(3) perovskites. In the quest for tailor-made materials, it is essential to be ... [more ▼] A strong coupling of the lattice to functional properties is observed in many transition metal oxide systems, such as the ABO(3) perovskites. In the quest for tailor-made materials, it is essential to be able to control the structural properties of the compound(s) of interest. Here thin film solid solutions that combine NdNiO3 and LaNiO3, two materials with the perovskite structure but distinct space groups, are analyzed. Raman spectroscopy and scanning transmission electron microscopy are combined in a synergistic approach to fully determine the mechanism of the structural crossover with chemical composition. It is found that the symmetry transition is achieved by phase coexistence in a way that depends on the substrate selected. These results carry implications for analog-tuning of physical properties in future functional materials based on these compounds. [less ▲] Detailed reference viewed: 91 (6 UL)![]() ; ; et al in APPLIED PHYSICS LETTERS (2021), 118(4), Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e., the ... [more ▼] Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e., the possibility to induce a phase transition to a polar phase by an electric field. Here, we investigate the switching behavior of the model antiferroelectric perovskite PbZrO3 using thin films processed by chemical solution deposition in different geometries and orientations. Both out-of-plane and in-plane switching configurations are investigated. The critical field is observed to be highly dependent on the direction of the electric field with respect to the film texture. We show that this behavior is qualitatively consistent with a phase transition to a rhombohedral polar phase. We finally estimate the importance of crystallite orientation and film texturation in the variations observed in the literature. [less ▲] Detailed reference viewed: 37 (2 UL)![]() ; ; et al in JOURNAL OF MATERIALS CHEMISTRY C (2021), 9(12), 4307-4315 The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen O-18 from ... [more ▼] The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen O-18 from the water precursor and oxygen O-16 from the gas. In a previous study [T. Nguyen et al., Results Mater., 2020, 6, 100088, DOI: 10.1016/j.rinma.2020.100088], by means of structural, electrical, and optical characterizations, we identified key growth parameters of this unusual ALD process. Unexpectedly, the influence of molecular oxygen on the crystallography, microstructure, and morphology of the hundred-nanometer- to micrometer-thick ZnO films was significant. In this study, we present an unprecedented methodology by combining isotopic tracers with mass spectrometry to elucidate the role of the two different sources of oxygen atoms during the evolution of the growth. Notably, the use of in situ quartz crystal microbalance (QCM) and Secondary Ion Mass Spectrometry (SIMS) reveals new insights into the reaction mechanism for ZnO thin film growth. On the one hand, the non-negative mass change during the ZnO growth without O-2 gas is attributed to the presence of bare zinc atoms on the surface due to the reaction between monoethyl zinc and hydroxyl groups of the water precursor after the diethyl zinc pulse. On the other hand, the detection of ZnxOyC2H5- ions by Time-of-Flight SIMS (TOF-SIMS) and the mass increase during the O-2 pulse suggest a new reaction mechanism for the ZnO thin film growth in the presence of gaseous O-2 where the ethyl ligand of the zinc precursor can react with O-2 to form ethylperoxy radicals. The formations of the ethylperoxy zinc and/or zinc atoms lead to more adsorption of water to form ethylhydroperoxide during the water pulse, inducing the positive mass change. The use of an isotopic substitution allowed us to unambiguously associate the mass gain with the gradual incorporation of gaseous oxygen throughout the growth process and thereby support the chemical reaction. [less ▲] Detailed reference viewed: 49 (1 UL)![]() Toulouse, Constance ![]() in Physical Review Materials (2021), 5(2), 024404 Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium ... [more ▼] Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally by helium implantation. Our combined Raman, x-ray diffraction, and transmission electron microscopy (TEM) study shows that the implantation causes an elongation of the BiFeO3 unit cell and ultimately a transition towards the so-called supertetragonal polymorph via states with mixed phases. In addition, TEM reveals the onset of amorphization at a threshold dose that does not seem to impede the overall increase in tetragonality. The phase transition from the R-like to T-like BiFeO3 appears as first-order in character, with regions of phase coexistence and abrupt changes in lattice parameters. [less ▲] Detailed reference viewed: 48 (5 UL)![]() ; ; Guennou, Mael ![]() in Results in Materials (2020), 6 The preparation of ZnO thin films with controlled electrical resistivity and optical properties is often challenged by the presence of defects, such as oxygen vacancies or interstitial zinc. Here, we ... [more ▼] The preparation of ZnO thin films with controlled electrical resistivity and optical properties is often challenged by the presence of defects, such as oxygen vacancies or interstitial zinc. Here, we investigate the material properties of ZnO polycrystalline thin films prepared by thermal Atomic Layer Deposition (ALD) with the presence of molecular oxygen pulsing during the growth. By means of structural, electrical and optical characterizations, we identify key growth parameters of this unusual ALD process. Unexpectedly, the influence of oxygen molecules on the crystallography, microstructure and morphology of ZnO films is significant from hundred-nanometers to micrometer thick film. The electrical resistivity of the films grown with oxygen gas shows a dramatic increase from 3 to 4 orders of magnitude. Additionally, photoluminescence measurements reveal that deep-level emissions caused by defects located deep in the band gap can be reduced by applying an adequate pulsing of oxygen gas during the process. Finally, we conclude with a discussion about the degree of consistency between the chemical composition, the inner strain and the optical and electrical properties of the films obtained with the different thermodynamic parameters of growth. Several hypotheses are discussed in order to understand the dominance of (002) orientation in the presence of oxygen during the ALD growth process. [less ▲] Detailed reference viewed: 61 (4 UL)![]() ; Toulouse, Constance ![]() in PHYSICAL REVIEW LETTERS (2020), 124(9), 097603-6 Model materials are precious test cases for elementary theories and provide building blocks for the understanding of more complex cases. Here, we describe the lattice dynamics of the structural phase ... [more ▼] Model materials are precious test cases for elementary theories and provide building blocks for the understanding of more complex cases. Here, we describe the lattice dynamics of the structural phase transition in francisite Cu3Bi(SeO3)(2)O2Cl at 115 K and show that it provides a rare archetype of a transition driven by a soft antipolar phonon mode. In the high-symmetry phase at high temperatures, the soft mode is found at (0,0,0.5) at the Brillouin zone boundary and is measured by inelastic x-ray scattering and thermal diffuse scattering. In the low-symmetry phase, this soft-mode is folded back onto the center of the Brillouin zone as a result of the doubling of the unit cell, and appears as a fully symmetric mode that can be tracked by Raman spectroscopy. On both sides of the transition, the mode energy squared follows a linear behavior over a large temperature range. First-principles calculations reveal that, surprisingly, the flat phonon band calculated for the high-symmetry phase seems incompatible with the displacive character found experimentally. We discuss this unusual behavior in the context of an ideal Kittel model of an antiferroelectric transition. [less ▲] Detailed reference viewed: 56 (5 UL)![]() ; Guennou, Mael ![]() in Journal of Physics: Condensed Matter (2020), 32(18), 183001 Recent studies carried out with atomic force microscopy or high-resolution transmission electron microscopy reveal that ferroic domain walls can exhibit different physical properties than the bulk of the ... [more ▼] Recent studies carried out with atomic force microscopy or high-resolution transmission electron microscopy reveal that ferroic domain walls can exhibit different physical properties than the bulk of the domains, such as enhanced conductivity in insulators, or polar properties in non-polar materials. In this review we show that optical techniques, in spite of the diffraction limit, also provide key insights into the structure and physical properties of ferroelectric and ferroelastic domain walls. We give an overview of the uses, specificities and limits of these techniques, and emphasize the properties of the domain walls that they can probe. We then highlight some open questions of the physics of domain walls that could benefit from their use. [less ▲] Detailed reference viewed: 111 (2 UL)![]() Weiss, Thomas ![]() ![]() ![]() in Physical Review Applied (2020), 14 Detailed reference viewed: 153 (11 UL)![]() ; Guennou, Mael ![]() in Nature Reviews. Physics (2020), 2(11), 634-648 Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses approaching the unit cell level. When this spatial confinement is combined with observations of emergent functional ... [more ▼] Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses approaching the unit cell level. When this spatial confinement is combined with observations of emergent functional properties, such as polarity in non-polar systems or electrical conductivity in otherwise insulating materials, it becomes clear that domain walls represent new and exciting objects in matter. In this Review, we discuss the exotic polarization profiles that can arise at domain walls with multiple order parameters and the different mechanisms that lead to domain-wall polarity in non-polar ferroelastic materials. The emergence of energetically degenerate variants of the domain walls themselves suggests the existence of interesting quasi-1D topological defects within such walls. We also provide an overview of the general notions that have been postulated as fundamental mechanisms responsible for domain-wall conduction in ferroelectrics. We then discuss the prospect of combining domain walls with transition regions observed at phase boundaries, homo- and heterointerfaces, and other quasi-2D objects, enabling emergent properties beyond those available in today's topological systems. Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses approaching the unit cell level and emergent functional properties. This Review discusses the exotic polarization profiles that arise at domain walls and the fundamental mechanisms responsible for domain-wall conduction. [less ▲] Detailed reference viewed: 116 (3 UL)![]() ; ; et al in APL MATERIALS (2020), 8(8), Bismuth vanadate (BiVO4) has recently been under focus for its potential use in photocatalysis thanks to its well-suited absorption edge in the visible light range. Here, we characterize the optical ... [more ▼] Bismuth vanadate (BiVO4) has recently been under focus for its potential use in photocatalysis thanks to its well-suited absorption edge in the visible light range. Here, we characterize the optical absorption of a BiVO4 single crystal as a function of temperature and polarization direction by reflectance and transmittance spectroscopy. The optical bandgap is found to be very sensitive to the temperature, and to the tetragonal-to-monoclinic ferroelastic transition at 523 K. The anisotropy, as measured by the difference in the absorption edge for the light polarized parallel and perpendicular to the principal axis, is reduced from 0.2 eV in the high-temperature tetragonal phase to 0.1 eV at ambient temperature. We show that this evolution is dominantly controlled by the ferroelastic shear strain. These findings provide a route for further optimization of bismuth vanadate-based light absorbers in photocatalytic devices. [less ▲] Detailed reference viewed: 95 (10 UL)![]() ; Guennou, Mael ![]() ![]() in APPLIED PHYSICS LETTERS (2020), 116(21), Ferroelectric liquid crystals (FLCs) couple the direction of their spontaneous electric polarization to the direction of tilt of their optic axis. Consequently, reversal of the electric polarization by an ... [more ▼] Ferroelectric liquid crystals (FLCs) couple the direction of their spontaneous electric polarization to the direction of tilt of their optic axis. Consequently, reversal of the electric polarization by an electric field gives rise to an immediate and lasting optical response when an appropriately aligned FLC is observed between crossed polarizers, with one field direction yielding a dark image and the opposite direction yielding a bright image. Here, this peculiar electro-optic response is used to image, with high optical contrast, 180 degrees ferroelectric domains in a crystalline substrate of magnesium-doped lithium niobate. The lithium niobate substrate contains a few domains with upward electric polarization surrounded by regions with downward electric polarization. In contrast to a reference non-chiral liquid crystal that is unable to show ferroelectric behavior due to its high symmetry, the FLC, which is used as a thin film confined between the lithium niobate substrate and an inert aligning substrate, reveals ferroelectric domains as well as their boundaries, with strong black and white contrast. The results show that FLCs can be used for non-destructive readout of domains in underlying ferroelectrics, with potential applications in, e.g., photonic devices and non-volatile ferroelectric memories. [less ▲] Detailed reference viewed: 70 (4 UL)![]() ; ; et al in RSC Advances (2020), 10 Mesoporous TiO2 films with enhanced photocatalytic activity in both UV and visible wavelength ranges were developed through a non-conventional atomic layer deposition (ALD) process at room temperature ... [more ▼] Mesoporous TiO2 films with enhanced photocatalytic activity in both UV and visible wavelength ranges were developed through a non-conventional atomic layer deposition (ALD) process at room temperature. Deposition at such a low temperature promotes the accumulation of by-products in the amorphous TiO2 films, caused by the incomplete hydrolysis of the TiCl4 precursor. The additional thermal annealing induces the fast recrystallisation of amorphous films, as well as an in situ acidic treatment of TiO2. The interplay between the deposition parameters, such as purge time, the amount of structural defects introduced and the enhancement of the photocatalytic properties from different mesoporous films clearly shows that our easily upscalable non-conventional ALD process is of great industrial interest for environmental remediation and other photocatalytic applications, such as hydrogen production. [less ▲] Detailed reference viewed: 55 (1 UL)![]() ; ; Guennou, Mael ![]() in APL MATERIALS (2020), 8(6), Collective rotations and tilts of oxygen polyhedra play a crucial role in the physical properties of complex oxides such as magnetism and conductivity. Such rotations can be tuned by preparing thin films ... [more ▼] Collective rotations and tilts of oxygen polyhedra play a crucial role in the physical properties of complex oxides such as magnetism and conductivity. Such rotations can be tuned by preparing thin films in which dimensionality, strain, and interface effects come into play. However, little is known of the tilt and rotational distortions in films a few unit cells thick including the question of if coherent tilt patterns survive at all in this ultrathin limit. Here, a series of films of perovskite LaNiO3 is studied and it is shown that the phonon mode related to oxygen octahedral tilts can be followed by Raman spectroscopy down to a film thickness of three pseudocubic perovskite unit cells (similar to 1.2 nm). To push the limits of resolution to the ultrathin regime, a statistical analysis method is introduced to separate the Raman signals of the film and substrate. Most interestingly, these analyses reveal a pronounced hardening of the tilt vibrational mode in the thinnest films. A comparison between the experimental results, first principles simulations of the atomic structure, and the standing wave model, which accounts for size effects on the phononic properties, reveals that in the ultrathin regime, the Raman spectra are a hybrid entity of both the bulk and surface phononic behavior. These results showcase Raman spectroscopy as a powerful tool to probe the behavior of perovskite films down to the ultrathin limit. [less ▲] Detailed reference viewed: 119 (16 UL)![]() ; Toulouse, Constance ![]() in Physical Review Letters (2020) Detailed reference viewed: 56 (0 UL) |
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