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![]() Sood, Mohit ![]() ![]() in Progress in Photovoltaics (2021) Interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open ... [more ▼] Interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex), that is, a VOC deficit. Aspirations to reach higher VOC,ex values require a comprehensive knowledge of the connection between VOC deficit and interface recombination. Here, a near-surface defect model is developed for copper indium di-selenide solar cells grown under Cu-excess conditions. These cell show the typical signatures of interface recombination: a strong disparity between VOC,in and VOC,ex, and extrapolation of the temperature dependent q·VOC,ex to a value below the bandgap energy. Yet, these cells do not suffer from reduced interface bandgap or from Fermi-level pinning. The model presented is based on experimental analysis of admittance and deep-level transient spectroscopy, which show the signature of an acceptor defect. Numerical simulations using the near-surface defects model show the signatures of interface recombination without the need for a reduced interface bandgap or Fermi-level pinning. These findings demonstrate that the VOC,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current–voltage measurements to identify the cause of interface recombination in the devices. [less ▲] Detailed reference viewed: 59 (8 UL)![]() Martin Lanzoni, Evandro ![]() ![]() ![]() in Nano Energy (2021), 88 An in-depth understanding of the electronic properties of grain boundaries (GBs) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very ... [more ▼] An in-depth understanding of the electronic properties of grain boundaries (GBs) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very high and hence limit the solar cell device performance. Kelvin Probe Force Microscopy (KPFM) is the method of choice to investigate GB band bending on the nanometer scale and thereby helps to develop passivation strategies. Here, it is shown that the workfunction, measured with amplitude modulation (AM)-KPFM, which is by far the most common KPFM measurement mode, is prone to exhibit measurement artifacts at grain boundaries on typical solar cell absorbers such as Cu(In,Ga)Se2 and CH3NH3PbI3. This is a direct consequence of a change in the cantilever–sample distance that varies on rough samples. Furthermore, we critically discuss the impact of different environments (air versus vacuum) and show that air exposure alters the GB and facet contrast, which leads to erroneous interpretations of the GB physics. Frequency modulation (FM)-KPFM measurements on non-air-exposed CIGSe and perovskite absorbers show that the amount of band bending measured at the GB is negligible and that the electronic landscape of the semiconductor surface is dominated by facet-related contrast due to the polycrystalline nature of the absorbers. [less ▲] Detailed reference viewed: 133 (13 UL)![]() Shukla, Sudhanshu ![]() ![]() ![]() in Joule (2021), 5 Detailed reference viewed: 137 (8 UL)![]() Shukla, Sudhanshu ![]() ![]() ![]() in Physical Review Materials (2021), 5 Detailed reference viewed: 108 (6 UL)![]() Adeleye, Damilola ![]() ![]() ![]() in Materials Research Express (2021), 8 Detailed reference viewed: 263 (12 UL)![]() Weiss, Thomas ![]() ![]() ![]() in Solar RRL (2021) Detailed reference viewed: 105 (5 UL)![]() Siebentritt, Susanne ![]() ![]() ![]() in JPhys Materials (2021) Detailed reference viewed: 42 (0 UL)![]() Ramirez Sanchez, Omar ![]() ![]() in Solar RRL (2021) The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an ... [more ▼] The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an improvement of the open-circuit voltage, which origin has been associated with grain boundaries. The present work discusses the effect of potassium fluoride post-deposition treatments on the optoelectronic properties of a series of sodium-free Cu(In,Ga)Se2 single crystals with varying Cu and Ga content. Results suggest that improvement of the quasi-Fermi level splitting can be achieved despite the absence of grain boundaries, being greater in low-gallium Cu-poor absorbers. Secondary ion mass spectrometry reveals the presence of potassium inside the bulk of the films, suggesting that transport of potassium can occur through grain interiors. In addition, a type inversion from n to p in KF-treated low-gallium Cu(In,Ga)Se2 is observed, which along a carrier lifetime study demonstrates that potassium can act as a dopant. The fact that potassium by its own can alter the optoelectronic properties of Cu(In,Ga)Se2 single crystals demonstrates that the effect of post-deposition treatments goes beyond grain boundary passivation. [less ▲] Detailed reference viewed: 269 (35 UL)![]() Sood, Mohit ![]() ![]() ![]() in Solar RRL (2021) Detailed reference viewed: 50 (0 UL)![]() Wolter, Max ![]() in Progress in Photovoltaics (2021) Detailed reference viewed: 76 (0 UL)![]() Sood, Mohit ![]() ![]() ![]() in Progress in Photovoltaics (2020) Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown ... [more ▼] Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess.. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides.. The origin of these changes in device performance was investigated with capacitance-voltage measurement which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature dependent current-voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly-doped interfacial p+ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Curich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber. [less ▲] Detailed reference viewed: 161 (9 UL)![]() Kameni Boumenou, Christian ![]() in Physical Review Materials (2020) Detailed reference viewed: 207 (23 UL)![]() Lomuscio, Alberto ![]() ![]() ![]() in Physical Review. B (2020), 101(8), 085119- Detailed reference viewed: 259 (22 UL)![]() ; Spindler, Conrad ![]() ![]() in IEEE (2020) Detailed reference viewed: 147 (22 UL)![]() ; Lomuscio, Alberto ![]() ![]() in Nano Energy (2020), 76 Detailed reference viewed: 143 (2 UL)![]() Werner, Florian ![]() ![]() in Scientific Reports (2020) Detailed reference viewed: 172 (5 UL)![]() Weiss, Thomas ![]() ![]() ![]() in Physical Review Applied (2020), 14 Detailed reference viewed: 133 (11 UL)![]() Rey, Germain ![]() in IEEE Journal of Photovoltaics (2020) Detailed reference viewed: 139 (10 UL)![]() Werner, Florian ![]() ![]() in Physical Review Applied (2020) Detailed reference viewed: 209 (2 UL)![]() Colombara, Diego ![]() ![]() in Nature Communications (2020) Detailed reference viewed: 255 (5 UL) |
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