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Results 1-20 of 147.
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   Phonon coupling and shallow defects in CuInS2Lomuscio, Alberto  ; Sood, Mohit ; Melchiorre, Michele et alin Physical Review. B (2020), 101(8), 085119- Detailed reference viewed: 59 (5 UL)Surface characterization of epitaxial Cu-rich CuInSe2 absorbers; Spindler, Conrad ; Ramirez Sanchez, Omar et alin IEEE (2020) Detailed reference viewed: 15 (0 UL) Photoluminescence-Based Method for Imaging Buffer Layer Thickness in CIGS Solar CellsRey, Germain ; ; et alin IEEE Journal of Photovoltaics (2020) Detailed reference viewed: 33 (0 UL)Electronic defects in Cu(In,Ga)Se2: Towards a comprehensive modelSpindler, Conrad ; Babbe, Finn ; Wolter, Max et alin Physical Review Materials (2019), 3 Detailed reference viewed: 122 (10 UL)"Keine Schwarzseher" Forscher der Universität Luxemburg unterstützen Jugendliche von "Fridays for Future"Carr, Constance ; König, Ariane ; Reckinger, Rachel et alArticle for general public (2019) Detailed reference viewed: 148 (7 UL)Quasi-Fermi-Level Splitting of Cu-Poor and Cu-Rich CuInS2 Absorber LayersLomuscio, Alberto ; Rödel, Tobias ; et alin Physical Review Applied (2019), 11 Detailed reference viewed: 388 (9 UL)Challenge in Cu-rich CuInSe2 thin film solar cells: Defect caused by etchingElanzeery, Hossam ; Melchiorre, Michele ; Sood, Mohit et alin Physical Review Materials (2019), 3 Detailed reference viewed: 114 (12 UL)Variable chemical decoration of extended defects in Cu-poor Cu2ZnSnSe4 thin films; Redinger, Alex ; Siebentritt, Susanne et alin Physical Review Materials (2019), 3 Detailed reference viewed: 124 (6 UL)Can we see defects in capacitance measurements of thin‐film solar cells ?Werner, Florian ; Babbe, Finn ; Elanzeery, Hossam et alin Progress in Photovoltaics (2019), 27 Detailed reference viewed: 116 (1 UL)The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layersBabbe, Finn ; Elanzeery, Hossam ; Wolter, Max et alin Journal of Physics: Condensed Matter (2019), 31 Detailed reference viewed: 71 (3 UL)Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductorsSpindler, Conrad ; Galvani, Thomas ; Wirtz, Ludger et alin Journal of Applied Physics (2019) Detailed reference viewed: 40 (6 UL)Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 – Impact of front surface recombination and its temperature dependenceWeiss, Thomas ; ; Wolter, Max et alin Science and Technology of Advanced Materials (2019), 20 Detailed reference viewed: 88 (2 UL)Influence of stoichiometry and temperature on quasi Fermi level splitting of sulfide CIS absorber layersLomuscio, Alberto ; Melchiorre, Michele ; Siebentritt, Susanne in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (2018, November 29) CuInS-based solar cells suffer from a low open circuit voltage. Absorbers grown under both Cu-excess and Cudeficiency have been used to fabricate record efficiency photovoltaic cells. In this work, we ... [more ▼] CuInS-based solar cells suffer from a low open circuit voltage. Absorbers grown under both Cu-excess and Cudeficiency have been used to fabricate record efficiency photovoltaic cells. In this work, we present the influence of stoichiometry on the quality of absorbers by means of calibrated room temperature photoluminescence and quasi Fermi level splitting evaluation (qFLs). Deep defects-related photoluminescence decreases using higher Cu/In ratio, leading to a corresponding improvement in qFLs, with values above 900 meV for high copper rich absorbers. © 2018 IEEE. [less ▲] Detailed reference viewed: 73 (2 UL)High‐performance low bandgap thin film solar cells for tandem applicationsElanzeery, Hossam ; Babbe, Finn ; Melchiorre, Michele et alin Progress in Photovoltaics (2018) Thin film tandem solar cells provide a promising approach to achieve high efficiencies. These tandem cells require at least a bottom low bandgap and an upper high bandgap solar cell. In this contribution ... [more ▼] Thin film tandem solar cells provide a promising approach to achieve high efficiencies. These tandem cells require at least a bottom low bandgap and an upper high bandgap solar cell. In this contribution, 2 high‐performance Cu(In,Ga)Se2 cells with bandgaps as low as 1.04 and 1.07 eV are presented. These cells have shown certified efficiencies of 15.7% and 16.6% respectively. Measuring these cells under a 780‐nm longpass filter, corresponding to the bandgap of a typical top cell in tandem applications (1.57 eV), they achieved efficiencies of 7.9% and 8.3%. Admittance measurements showed no recombination active deep defects. One additional high‐performance CuInSe2 thin film solar cell with bandgap of 0.95 eV and efficiency of 14.1% is presented. All 3 cells have the potential to be integrated as bottom low bandgap cells in thin film tandem applications achieving efficiencies around 24% stacked with an efficient high bandgap top cell. [less ▲] Detailed reference viewed: 186 (5 UL)Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar CellWerner, Florian ; Siebentritt, Susanne in Physical Review Applied (2018), 9 Detailed reference viewed: 119 (2 UL)The Optical Diode Ideality Factor Enables Fast Screening of Semiconductors for Solar CellsBabbe, Finn ; ; Siebentritt, Susanne in Solar RRL (2018), 1800248 Detailed reference viewed: 131 (5 UL)Potassium fluoride postdeposition treatment with etching step on both Cu-rich and Cu-poor CuInSe2 thin film solar cellsBabbe, Finn ; Elanzeery, Hossam ; Melchiorre, Michele et alin Physical Review Materials (2018), 2(10), 105405 Detailed reference viewed: 100 (4 UL)Investigation on the Angle and Spectral Dependence of the Internal and the External Quantum Efficiency of Crystalline Silicon Solar Cells and Modules; ; Siebentritt, Susanne in IEEE Journal of Photovoltaics (2018) Detailed reference viewed: 70 (0 UL)Interdiffusion and Doping Gradients at the Buffer/Absorber Interface in Thin-Film Solar CellsWerner, Florian ; Babbe, Finn ; Burkhart, Jan et alin ACS Applied Materials and Interfaces (2018), 10 Detailed reference viewed: 103 (9 UL)Influence of Sodium and Rubidium Postdeposition Treatment on the Quasi-Fermi Level Splitting of Cu(In,Ga)Se2 Thin FilmsWolter, Max ; ; et alin IEEE Journal of Photovoltaics (2018) Detailed reference viewed: 89 (3 UL) |
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