References of "Thin Solid Films"
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See detailInkjet-printed indium sulfide buffer layer for Cu(In,Ga)(S,Se)2 thin film solar cells
Debot, Alice UL; Chu, Van Ben; Adeleye, Damilola UL et al

in Thin Solid Films (2022)

We report an environmentally friendly inkjet-printed indium sulfide (In2S3) buffer layer using benign chemistry and processing conditions. A pre-synthesized indium-thiourea compound is dissolved in a ... [more ▼]

We report an environmentally friendly inkjet-printed indium sulfide (In2S3) buffer layer using benign chemistry and processing conditions. A pre-synthesized indium-thiourea compound is dissolved in a mixture of water and ethanol, inkjet printed on a Cu(In,Ga)(S,Se)2 absorber and annealed in air. The buffer layer shows a β-In2S3 structure with few organic impurities and band gap in the range of 2.3 eV. An ultraviolet ozone treatment applied to the surface of the absorber prior to inkjet printing of the precursor is used to improve the wettability of the ink and therefore the surface coverage of the buffer on the absorber layer. The device with a fully covering In2S3 layer shows better open circuit voltage and fill factor than the device with a partially covering In2S3 layer. The best In2S3 device showed a light to electric power conversion efficiency similar to the reference cadmium sulfide buffer layer device. Good wettability conditions are therefore essential for higher efficiency solar cells when the buffer layer is inkjet-printed. [less ▲]

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See detailImpact of metallic potassium post-deposition treatment on epitaxial Cu(In, Ga)Se2
Martin Lanzoni, Evandro UL; Ramirez Sanchez, Omar UL; Phirke, Himanshu UL et al

in Thin Solid Films (2021)

Alkali post-deposition treatments (PDTs) of Cu(In, Ga)Se2 (CIGSe) absorbers are known to improve the power conversion efficiency of the thin-film solar cell devices. The PDTs are usually carried out via ... [more ▼]

Alkali post-deposition treatments (PDTs) of Cu(In, Ga)Se2 (CIGSe) absorbers are known to improve the power conversion efficiency of the thin-film solar cell devices. The PDTs are usually carried out via evaporation of alkali fluorides in a selenium atmosphere onto a hot substrate. In this work, an alkali metal dispenser was used to evaporate pure metallic potassium onto epitaxial CIGSe absorbers. Subsequently, the absorber layers were heated in-situ to monitor chemical reactions and diffusion into the bulk. Due to the absence of grain boundaries, fluorine, and selenium, the effect of K on CIGSe absorber properties can be directly monitored. We find that potassium effectively diffuses into the bulk of epitaxial CIGSe absorber layers. The diffusion depends on the Cucontent of the CIGSe absorbers, in which Cu-depleted films present higher diffusion rates of K. Photoluminescence (PL) imaging corroborates that K in the bulk of the CIGSe absorber increases the PL yield, suggesting a passivation of defects or an increase in doping. This work highlights that alkali PDTs are not limited by interface and grain boundary modifications but also changes the absorber bulk properties, which needs to be taken into account. [less ▲]

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See detailCu2SnS3 based thin film solar cells from chemical spray pyrolysis
Sayed, Mohamed H.; Robert, Erika UL; Dale, Phillip UL et al

in Thin Solid Films (2019), 669

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See detailInnovation highway: Breakthrough milestones and key evelopments in chalcopyrite photovoltaics from a retrospective viewpoint
Abou-Ras, Daniel; Wagner, Sigur; Stanbery, Bill J. et al

in Thin Solid Films (2017), 633

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See detailWhat is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se2 ?
Werner, Florian UL; Bertram, Tobias UL; Mengozzi, Jonathan et al

in Thin Solid Films (2017), 633

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See detailPost-deposition treatment of Cu2ZnSnSe4 with alkalis
Rey, Germain UL; Babbe, Finn UL; Weiss, Thomas UL et al

in Thin Solid Films (2016), 633

Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor ... [more ▼]

Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor (from 0.58 to 0.61 and 0.62), open-circuit voltage (Voc) (from 314 mV to 337 mV and 325 mV) and short-circuit current density (from 35.3 mA⋅cm −2 to 38.3 mA⋅cm −2 and 38.6 mA⋅cm −2). Voc improvement was higher for solar cells with NaF treatment due to an increase in radiative efficiency at room temperature and shallower defect activation energy as determined by photoluminescence (PL) and temperature dependent admittance spectroscopy, respectively. In the case of KF treatment, red-shift of the PL, higher band tail density of state and donor activation energy deeper in the band gap were limiting further improvement of the Voc compared to NaF treatment. [less ▲]

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See detailEpitaxial Cu2ZnSnSe4 thin films and devices
Redinger, Alex UL; Groiss, Heiko; Sendler, Jan UL et al

in THIN SOLID FILMS (2015), 582

Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different ... [more ▼]

Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1\%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved. [less ▲]

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See detailElectrical characterization of Cu(In,Ga)Se2-solar cells by voltage dependent time-resolved photoluminescence
Maiberg, Matthias; Spindler, Conrad UL; Jarzembowski, Enrico et al

in Thin Solid Films (2014), 582

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See detail4-Amino-1,2,4-triazole: Playing a key role in the chemical deposition of Cu–In–Ga metal layers for photovoltaic applications.
Berner, Ulrich; Widenmeyer, Markus; Engler, Patrick et al

in Thin Solid Films (2014)

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See detailSimplified formation process for Cu2ZnSnS4-based solar cells
Berg, Dominik UL; Crossay, Alexandre UL; Guillot, Jérôme et al

in Thin Solid Films (2014), 573

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See detailCuInSe2 semiconductor formation by laser annealing
Meadows, Helen UL; Regesch, David UL; Thevenin, Maxime UL et al

in Thin Solid Films (2014)

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See detailEpitaxial Cu2ZnSnSe4 thin films and devices
Redinger, Alex UL; Groiss, Heiko; Sendler, Jan UL et al

in Thin Solid Films (2014)

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See detailWhy are kesterite solar cells not 20% efficient?
Siebentritt, Susanne UL

in Thin Solid Films (2013)

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See detailHCl and Br2-MeOH etching of Cu2ZnSnSe4 polycrystalline absorbers
Mousel, Marina UL; Redinger, Alex UL; Djemour, Rabie UL et al

in Thin Solid Films (2013), 535

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See detailFormation of Cu3BiS3 thin films via sulfurization of Bi–Cu metal precursors
Colombara, Diego UL; Peter, Laurence M.; Hutchings, Kyle et al

in Thin Solid Films (2012), 520(16), 51655171

Thin films of Cu3BiS3 have been produced by conversion of stacked and co-electroplated Bi–Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating ... [more ▼]

Thin films of Cu3BiS3 have been produced by conversion of stacked and co-electroplated Bi–Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics. [less ▲]

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See detailThin film solar cells based on the ternary compound Cu2SnS3
Berg, Dominik M.; Djemour, Rabie UL; Gütay, Levent UL et al

in Thin Solid Films (2012), 520

Detailed reference viewed: 190 (4 UL)