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   Inkjet-printed indium sulfide buffer layer for Cu(In,Ga)(S,Se)2 thin film solar cellsDebot, Alice  ; ; Adeleye, Damilola et alin Thin Solid Films (2022) We report an environmentally friendly inkjet-printed indium sulfide (In2S3) buffer layer using benign chemistry and processing conditions. A pre-synthesized indium-thiourea compound is dissolved in a ... [more ▼] We report an environmentally friendly inkjet-printed indium sulfide (In2S3) buffer layer using benign chemistry and processing conditions. A pre-synthesized indium-thiourea compound is dissolved in a mixture of water and ethanol, inkjet printed on a Cu(In,Ga)(S,Se)2 absorber and annealed in air. The buffer layer shows a β-In2S3 structure with few organic impurities and band gap in the range of 2.3 eV. An ultraviolet ozone treatment applied to the surface of the absorber prior to inkjet printing of the precursor is used to improve the wettability of the ink and therefore the surface coverage of the buffer on the absorber layer. The device with a fully covering In2S3 layer shows better open circuit voltage and fill factor than the device with a partially covering In2S3 layer. The best In2S3 device showed a light to electric power conversion efficiency similar to the reference cadmium sulfide buffer layer device. Good wettability conditions are therefore essential for higher efficiency solar cells when the buffer layer is inkjet-printed. [less ▲] Detailed reference viewed: 97 (9 UL)Impact of metallic potassium post-deposition treatment on epitaxial Cu(In, Ga)Se2Martin Lanzoni, Evandro ; Ramirez Sanchez, Omar ; Phirke, Himanshu et alin Thin Solid Films (2021) Alkali post-deposition treatments (PDTs) of Cu(In, Ga)Se2 (CIGSe) absorbers are known to improve the power conversion efficiency of the thin-film solar cell devices. The PDTs are usually carried out via ... [more ▼] Alkali post-deposition treatments (PDTs) of Cu(In, Ga)Se2 (CIGSe) absorbers are known to improve the power conversion efficiency of the thin-film solar cell devices. The PDTs are usually carried out via evaporation of alkali fluorides in a selenium atmosphere onto a hot substrate. In this work, an alkali metal dispenser was used to evaporate pure metallic potassium onto epitaxial CIGSe absorbers. Subsequently, the absorber layers were heated in-situ to monitor chemical reactions and diffusion into the bulk. Due to the absence of grain boundaries, fluorine, and selenium, the effect of K on CIGSe absorber properties can be directly monitored. We find that potassium effectively diffuses into the bulk of epitaxial CIGSe absorber layers. The diffusion depends on the Cucontent of the CIGSe absorbers, in which Cu-depleted films present higher diffusion rates of K. Photoluminescence (PL) imaging corroborates that K in the bulk of the CIGSe absorber increases the PL yield, suggesting a passivation of defects or an increase in doping. This work highlights that alkali PDTs are not limited by interface and grain boundary modifications but also changes the absorber bulk properties, which needs to be taken into account. [less ▲] Detailed reference viewed: 58 (5 UL)Cu2SnS3 based thin film solar cells from chemical spray pyrolysis; Robert, Erika ; Dale, Phillip et alin Thin Solid Films (2019), 669 Detailed reference viewed: 246 (3 UL)Innovation highway: Breakthrough milestones and key evelopments in chalcopyrite photovoltaics from a retrospective viewpoint; ; et al in Thin Solid Films (2017), 633 Detailed reference viewed: 288 (6 UL)What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se2 ?Werner, Florian ; Bertram, Tobias ; et alin Thin Solid Films (2017), 633 Detailed reference viewed: 230 (9 UL)Post-deposition treatment of Cu2ZnSnSe4 with alkalisRey, Germain ; Babbe, Finn ; Weiss, Thomas et alin Thin Solid Films (2016), 633 Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor ... [more ▼] Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor (from 0.58 to 0.61 and 0.62), open-circuit voltage (Voc) (from 314 mV to 337 mV and 325 mV) and short-circuit current density (from 35.3 mA⋅cm −2 to 38.3 mA⋅cm −2 and 38.6 mA⋅cm −2). Voc improvement was higher for solar cells with NaF treatment due to an increase in radiative efficiency at room temperature and shallower defect activation energy as determined by photoluminescence (PL) and temperature dependent admittance spectroscopy, respectively. In the case of KF treatment, red-shift of the PL, higher band tail density of state and donor activation energy deeper in the band gap were limiting further improvement of the Voc compared to NaF treatment. [less ▲] Detailed reference viewed: 229 (11 UL)Epitaxial Cu2ZnSnSe4 thin films and devicesRedinger, Alex ; ; Sendler, Jan et alin THIN SOLID FILMS (2015), 582 Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different ... [more ▼] Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1\%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved. [less ▲] Detailed reference viewed: 136 (3 UL)Electrical characterization of Cu(In,Ga)Se2-solar cells by voltage dependent time-resolved photoluminescence; Spindler, Conrad ; et alin Thin Solid Films (2014), 582 Detailed reference viewed: 75 (6 UL) Discrimination and determination of secondary phases from a Cu2ZnSnS4 phase using X-ray diffraction and Raman spectroscopyBerg, Dominik ; Arasimowicz, Monika ; Gütay, Levent et alin Thin Solid Films (2014), 569 Detailed reference viewed: 166 (1 UL)4-Amino-1,2,4-triazole: Playing a key role in the chemical deposition of Cu–In–Ga metal layers for photovoltaic applications.; ; et al in Thin Solid Films (2014) Detailed reference viewed: 180 (4 UL)Annealing of wet treated Cu(In,Ga)(S,Se)2 solar cells with an indium sulfide bufferHönes, Christian ; Siebentritt, Susanne in Thin Solid Films (2014) Detailed reference viewed: 152 (1 UL)Simplified formation process for Cu2ZnSnS4-based solar cellsBerg, Dominik ; Crossay, Alexandre ; et alin Thin Solid Films (2014), 573 Detailed reference viewed: 281 (3 UL)CuInSe2 semiconductor formation by laser annealingMeadows, Helen ; Regesch, David ; Thevenin, Maxime et alin Thin Solid Films (2014) Detailed reference viewed: 155 (2 UL)Controlled bandgap CuIn1 − xGax(S0.1Se0.9)2 (0.10 ≤ x ≤ 0.72) solar cellsMalaquias, Joao Corujo Branco ; Berg, Dominik ; Sendler, Jan et alin Thin Solid Films (2014) Detailed reference viewed: 104 (7 UL)Epitaxial Cu2ZnSnSe4 thin films and devicesRedinger, Alex ; ; Sendler, Jan et alin Thin Solid Films (2014) Detailed reference viewed: 200 (8 UL)Why are kesterite solar cells not 20% efficient?Siebentritt, Susanne in Thin Solid Films (2013) Detailed reference viewed: 267 (7 UL)Influence of S/Se ratio on series resistance and on dominant recombination pathway in Cu2ZnSn(SSe)4 thin film solar cellsRedinger, Alex ; Mousel, Marina ; et alin Thin Solid Films (2013), 535 Detailed reference viewed: 224 (3 UL)HCl and Br2-MeOH etching of Cu2ZnSnSe4 polycrystalline absorbersMousel, Marina ; Redinger, Alex ; Djemour, Rabie et alin Thin Solid Films (2013), 535 Detailed reference viewed: 221 (8 UL)Formation of Cu3BiS3 thin films via sulfurization of Bi–Cu metal precursorsColombara, Diego ; ; et alin Thin Solid Films (2012), 520(16), 51655171 Thin films of Cu3BiS3 have been produced by conversion of stacked and co-electroplated Bi–Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating ... [more ▼] Thin films of Cu3BiS3 have been produced by conversion of stacked and co-electroplated Bi–Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics. [less ▲] Detailed reference viewed: 128 (11 UL)Thin film solar cells based on the ternary compound Cu2SnS3; Djemour, Rabie ; Gütay, Levent et alin Thin Solid Films (2012), 520 Detailed reference viewed: 193 (4 UL)
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