![]() Kurihara, Masato ![]() ![]() ![]() in Physica Status Solidi A. Applied Research (2009), 6(5), 1241-1244 Detailed reference viewed: 174 (3 UL)![]() ; Marso, Michel ![]() in Physica Status Solidi A. Applied Research (2005), 202(8), 1437-1442 The process of making laterally graded interference filters has been reanalyzed. A simple and consistent picture arises if one applies a constant electric field perpendicular to the etch current instead ... [more ▼] The process of making laterally graded interference filters has been reanalyzed. A simple and consistent picture arises if one applies a constant electric field perpendicular to the etch current instead of a constant current. The system is quantitatively modeled by means of a pure ohmic equivalent circuit model. [less ▲] Detailed reference viewed: 75 (0 UL)![]() ; ; et al in Physica Status Solidi A. Applied Research (2004), 201 We present a study of the magnetic-field dependence of the magnetic microstructure of the nanocrystalline soft magnet Vitroperm (Fe73Si16B7Nb3Cu1), which was treated so as to exhibit a macroscopic ... [more ▼] We present a study of the magnetic-field dependence of the magnetic microstructure of the nanocrystalline soft magnet Vitroperm (Fe73Si16B7Nb3Cu1), which was treated so as to exhibit a macroscopic magnetic anisotropy. The samples were analysed using Kerr microscopy and small-angle neutron scattering (SANS). As the applied magnetic field is decreased starting from saturation, we find that two processes occur independently: the formation of a domain structure with the net magnetisation of the domains aligned along the macroscopic easy axis and the increase in magnitude of static, nanometer-scale fluctuations of the spin orientation. The domain structure observations from Kerr microscopy are in excellent agreement with the results of the SANS experiments. [less ▲] Detailed reference viewed: 89 (3 UL)![]() Michels, Andreas ![]() in Physica Status Solidi A. Applied Research (2002), 189 We have analyzed magnetic-field dependent small-angle neutron scattering data on nanocrystalline electrodeposited Ni by means of the correlation function of the spin misalignment. The approach yields a ... [more ▼] We have analyzed magnetic-field dependent small-angle neutron scattering data on nanocrystalline electrodeposited Ni by means of the correlation function of the spin misalignment. The approach yields a correlation length lC of the spin misalignment that is a measure for the characteristic dimension of regions in which the magnetic moments are misaligned coherently into a common direction. We find that lC varies strongly with the applied magnetic field Hi with values extending from about 50 nm (larger than the value for uniformly magnetized grains) at small Hi to about 10 nm (considerably smaller than the grain size) at large applied fields. [less ▲] Detailed reference viewed: 95 (0 UL)![]() ; ; Michels, Andreas ![]() in Physica Status Solidi A. Applied Research (2002), 189 We present an experimental study of the magnetic properties and magnetic microstructure in the nanocrystalline hard magnet Tb. Field-dependent small-angle neutron scattering (SANS) data suggest that up to ... [more ▼] We present an experimental study of the magnetic properties and magnetic microstructure in the nanocrystalline hard magnet Tb. Field-dependent small-angle neutron scattering (SANS) data suggest that up to applied fields of several Tesla the magnetization remains locked in to the basal planes of the hcp crystal lattice of each individual crystallite; as a consequence, domain-wall movement along the basal planes is eliminated as a mechanism for magnetization reversal, and the coercive field is substantially increased. [less ▲] Detailed reference viewed: 102 (1 UL)![]() Marso, Michel ![]() in Physica Status Solidi A. Applied Research (2001), 188 The electrical characterization of epitaxially grown HEMT layer systems for device fabrication is commonly performed by Hall measurements. However, the ultimate characterization of a HEMT layer system is ... [more ▼] The electrical characterization of epitaxially grown HEMT layer systems for device fabrication is commonly performed by Hall measurements. However, the ultimate characterization of a HEMT layer system is the transistor device itself. The RoundHEMT concept meets the need for a device technology with few fabrication steps that allows a fast feedback to epitaxy while providing an evaluation of important electrical and also processing data. Even though nearly identical Hall data on structures with different thickness and doping concentration of the AlGaN layers suggest similar device properties, the RoundHEMTs resolve remarkable differences in device performance. The best layer structure was used to fabricate HEMTs with IDS = 700 mA/mm, fT = 35 GHz, and fmax = 70 GHz for LG = 0.2 mm. [less ▲] Detailed reference viewed: 88 (0 UL)![]() ![]() Sanctuary, Roland ![]() in Physica Status Solidi A. Applied Research (1984), 84(1), 103-111 The electrooptic coefficients for light propagation directions along three crystallographic axes were measured in the temperature range from 100 to 220 K. A Landau-type free energy expansion describes ... [more ▼] The electrooptic coefficients for light propagation directions along three crystallographic axes were measured in the temperature range from 100 to 220 K. A Landau-type free energy expansion describes temperature dependence. [less ▲] Detailed reference viewed: 105 (3 UL) |
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